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CED75A3 Datasheet(PDF) 1 Page - Chino-Excel Technology |
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CED75A3 Datasheet(HTML) 1 Page - Chino-Excel Technology |
1 / 4 page N-Channel Enhancement Mode Field Effect Transistor CED75A3/CEU75A3 FEATURES 25V, 60A, RDS(ON) = 9mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. 1 S G D CEU SERIES TO-252(D-PAK) CED SERIES TO-251(I-PAK) G G S S D D RDS(ON) = 13mΩ @VGS = 4.5V. Lead free product is acquired. Rev 3. 2008. Jan. http://www.cetsemi.com Specification and data are subject to change without notice . ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID PD IDM 25 0.37 56 200 60 ±20 V W A A V W/ C Operating and Store Temperature Range Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d EAS TJ,Tstg IAS -55 to 175 11 60 A mJ C Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Parameter Symbol Limit Units C/W C/W 50 2.7 RθJC RθJA |
Similar Part No. - CED75A3_08 |
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Similar Description - CED75A3_08 |
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