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CEU01N7 Datasheet(PDF) 1 Page - Chino-Excel Technology |
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CEU01N7 Datasheet(HTML) 1 Page - Chino-Excel Technology |
1 / 4 page N-Channel Enhancement Mode Field Effect Transistor CED01N7/CEU01N7 FEATURES 700V, 0.8A, RDS(ON) = 18 Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID PD IDM 700 0.25 31 3.0 0.8 ±30 V W A A V W/ C 1 CEU SERIES TO-252(D-PAK) CED SERIES TO-251(I-PAK) G G S S D D Lead free product is acquired. http://www.cetsemi.com G D S Rev 2. 2011.Jan Details are subject to change without notice . Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Parameter Symbol Limit Units C/W C/W 50 4 RθJC RθJA |
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