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ZXTN2010ASTOA Datasheet(PDF) 2 Page - Diodes Incorporated |
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ZXTN2010ASTOA Datasheet(HTML) 2 Page - Diodes Incorporated |
2 / 6 page ZXTN2010A SEMICO NDUC TORS ISSUE 2 - MAY 2006 2 PARAMETER SYMBOL VALUE UNIT Junction to ambient (a) R JA 125 °C/W Junction to ambient (b) R JA 175 °C/W NOTES (a) For a device through hole mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. Collector lead length to solder point 4mm. (b For a device mounted in a socket in still air conditions. Collector lead length 10mm. THERMAL RESISTANCE PARAMETER SYMBOL LIMIT UNIT Collector-base voltage BVCBO 150 V Collector-emitter voltage BVCEO 60 V Emitter-base voltage BVEBO 7V Continuous collector current (a) IC 4.5 A Peak pulse current ICM 15 A Practical power dissipation (a) Linear derating factor PD 1.0 8 W mW/°C Power dissipation at TA =25°C (b) Linear derating factor PD 0.71 5.7 W mW/°C Operating and storage temperature range Tj,Tstg -55 to +150 °C ABSOLUTE MAXIMUM RATINGS |
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