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ZXTN619MA Datasheet(PDF) 4 Page - Diodes Incorporated |
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ZXTN619MA Datasheet(HTML) 4 Page - Diodes Incorporated |
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4 / 7 page  ZXTN619MA Document Number DS31892 Rev. 4 - 2 4 of 7 www.diodes.com December 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTN619MA Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage BVCBO 100 190 - V IC = 100 µA Collector-Emitter Breakdown Voltage (Note 6) BVCEO 50 65 - V IC = 10 mA Emitter-Base Breakdown Voltage BVEBO 7 8.2 - V IE = 100 µA Collector Cutoff Current ICBO - - 100 nA VCB = 80V Emitter Cutoff Current IEBO - - 100 nA VEB = 6V Collector Emitter Cutoff Current ICES - - 100 nA VCES = 40V Static Forward Current Transfer Ratio (Note 6) hFE 200 300 200 100 - 400 450 400 225 40 - - - - - - IC = 10mA, VCE = 2V IC = 200mA, VCE = 2V IC = 1A, VCE = 2V IC = 2A, VCE = 2V IC = 6A, VCE = 2V Collector-Emitter Saturation Voltage (Note 6) VCE(sat) - - - - - - 10 70 145 115 225 270 20 100 200 220 300 320 mV IC = 0.1A, IB = 10mA IC = 1A, IB = 5mA IC = 1A, IB = 10mA IC = 2A, IB = 50mA IC = 3A, IB = 100mA IC = 4A, IB = 200mA Base-Emitter Turn-On Voltage (Note 6) VBE(on) - 0.94 1.00 V IC = 4A, VCE = 2V Base-Emitter Saturation Voltage (Note 6) VBE(sat) - 1.00 1.07 V IC = 4A, IB = 200mA Output Capacitance Cobo - 12 20 pF VCB = 10V. f = 1MHz Transition Frequency fT 100 165 - MHz VCE = 10V, IC = 50mA, f = 100MHz Turn-On Time ton - 170 - ns VCC = 10V, IC = 1A IB1 = IB2 = 10mA Turn-Off Time toff - 750 - ns Notes: 6. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%. |
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