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ZXTD717MC Datasheet(PDF) 4 Page - Diodes Incorporated |
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ZXTD717MC Datasheet(HTML) 4 Page - Diodes Incorporated |
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4 / 7 page  ZXTD717MC Document Number DS31934 Rev. 3 - 2 4 of 7 www.diodes.com December 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTD717MC Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage BVCBO -20 -35 - V IC = -100µA Collector-Emitter Breakdown Voltage (Note 9) BVCEO -12 -25 - V IC = -10mA Emitter-Base Breakdown Voltage BVEBO -7 -8.5 - V IE = -100µA Collector Cutoff Current ICBO - - -100 nA VCB = -16V Emitter Cutoff Current IEBO - - -100 nA VEB = -6V Collector Emitter Cutoff Current ICES - - -100 nA VCES = -10V Static Forward Current Transfer Ratio (Note 9) hFE 300 300 180 60 45 475 450 275 100 70 - - - - - - - - - - IC = -10mA, VCE = -2V IC = -100mA, VCE = -2V IC = -2.5A, VCE = -2V IC = -8A, VCE = -2V IC = -10A, VCE = -2V Collector-Emitter Saturation Voltage (Note 9) VCE(sat) - - - - - -10 -100 -100 -195 -240 -17 -140 -150 -300 -310 mV mV mV mV mV IC = -0.1A, IB = -10mA IC = -1A, IB = -10mA IC = -1.5A, IB = -50mA IC = -3A, IB = -50mA IC = -4A, IB= -150mA Base-Emitter Turn-On Voltage (Note 9) VBE(on) - -0.87 -0.96 V IC = -4A, VCE = -2V Base-Emitter Saturation Voltage (Note 9) VBE(sat) - -0.97 -1.07 V IC= -4A, IB = -150mA Output Capacitance Cobo - 21 30 pF VCB = -10V. f = 1MHz Transition Frequency fT 100 110 - MHz VCE = -10V, IC = -50mA, f = 100MHz Turn-on Time ton - 70 - ns VCC = -6V, IC = -2A IB1 = IB2 = -50mA Turn-off Time toff - 130 - ns Notes: 9. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2% |
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