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ZXT10N50DE6 Datasheet(PDF) 2 Page - Diodes Incorporated |
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ZXT10N50DE6 Datasheet(HTML) 2 Page - Diodes Incorporated |
2 / 6 page ISSUE 1 - SEPTEMBER 2000 ZXT10N50DE6 THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a) RθJA 113 °C/W Junction to Ambient (b) RθJA 73 °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t 5 secs. 2 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL LIMIT UNIT Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 5V Peak Pulse Current ICM 6A Continuous Collector Current IC 3A Base Current IB 500 mA Power Dissipation at TA=25°C (a) Linear Derating Factor PD 1.1 8.8 W mW/°C Power Dissipation at TA=25°C (b) Linear Derating Factor PD 1.7 13.6 W mW/°C Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C |
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