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ZXMP10A16K Datasheet(PDF) 4 Page - Diodes Incorporated |
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ZXMP10A16K Datasheet(HTML) 4 Page - Diodes Incorporated |
4 / 8 page ZXMP10A16K Issue 1 - October 2006 4 www.zetex.com © Zetex Semiconductors plc 2006 Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Symbol Min. Typ. Max. Unit Conditions Static Drain-source breakdown voltage V(BR)DSS -100 V ID= 250 A, VGS=0V Zero gate voltage drain current IDSS -1 AVDS= -100V, VGS=0V Gate-body leakage IGSS 100 nA VGS=±20V, VDS=0V Gate-source threshold voltage VGS(th) -2.0 -4.0 V ID= -250 A, VDS=VGS Static drain-source on-state resistance (*) NOTES: (*) Measured under pulsed conditions. Pulse width 300 s; duty cycle 2%. RDS(on) 0.235 W VGS= -10V, ID= -2.1A 0.285 VGS= -6V, ID= -1.9A Forward transconductance(*) (‡) gfs 4.7 S VDS= -15V, ID= -2.1A Dynamic(‡) Input capacitance Ciss 717 pF VDS= -50V, VGS=0V f=1MHz Output capacitance Coss 55.3 pF Reverse transfer capacitance Crss 46.4 pF Switching (†) (‡) (†) Switching characteristics are independent of operating junction temperature. (‡) For design aid only, not subject to production testing. Turn-on-delay time td(on) 4.3 ns VDD= -50V, ID= -1A RG=6.0 , VGS= -10V Rise time tr 5.2 ns Turn-off delay time td(off) 20 ns Fall time tf 12.1 ns Total gate charge Qg 16.5 nC VDS= -50V, VGS= -10V ID= -2.1A Gate-source charge Qgs 2.47 nC Gate drain charge Qgd 5.36 nC Source-drain diode Diode forward voltage(*) VSD -0.85 -0.95 V Tj=25°C, IS= -3.35A, VGS=0V Reverse recovery time(‡) trr 43.3 ns Tj=25°C, IS= -2.4A, di/dt=100A/ s Reverse recovery charge(‡) Qrr 76.5 nC |
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