ZXMP10A16K

Issue 1 - October 2006

4

www.zetex.com

© Zetex Semiconductors plc 2006

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

Static

Drain-source breakdown

voltage

-100

V

-1

Gate-body leakage

100

nA

Gate-source threshold voltage

-2.0

-4.0

V

Static drain-source on-state

NOTES:

(*) Measured under pulsed conditions. Pulse width

300 s; duty cycle

2%.

0.235

W

0.285

4.7

S

Dynamic(‡)

Input capacitance

717

pF

f=1MHz

Output capacitance

55.3

pF

Reverse transfer capacitance

46.4

pF

(†) Switching characteristics are independent of operating junction temperature.

(‡) For design aid only, not subject to production testing.

Turn-on-delay time

4.3

ns

Rise time

5.2

ns

Turn-off delay time

20

ns

Fall time

12.1

ns

Total gate charge

16.5

nC

Gate-source charge

2.47

nC

Gate drain charge

5.36

nC

Source-drain diode

Diode forward voltage(*)

-0.85

-0.95

V

Reverse recovery time(‡)

43.3

ns

di/dt=100A/ s

Reverse recovery charge(‡)

76.5

nC