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ZXMP3F37N8TA Datasheet(PDF) 4 Page - Diodes Incorporated |
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ZXMP3F37N8TA Datasheet(HTML) 4 Page - Diodes Incorporated |
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4 / 8 page  ZXMP3F37N8 Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Symbol Min. Typ. Max. Unit Conditions Static Drain-Source breakdown voltage V(BR)DSS -30 V ID = -250μA, VGS=0V Zero Gate voltage Drain current IDSS -1.0 µA VDS=-30V, VGS=0V Gate-Body leakage IGSS 100 nA VGS=±20V, VDS=0V Gate-Source threshold voltage VGS(th) -1.3 -2.5 V ID= -250μA, VDS=VGS Static Drain-Source on-state resistance (*) RDS(on) 0.025 0.041 Ω VGS= -10V, ID= -7.1A VGS= -4.5V, ID= -5.5A Forward Transconductance (*) (†) gfs 18.6 S VDS= -15V, ID= -7.1A Dynamic (†) Input capacitance Ciss 1678 pF Output capacitance Coss 303 pF Reverse transfer capacitance Crss 178 pF VDS= -15V, VGS=0V f=1MHz Switching (‡) (†) Turn-on-delay time td(on) 3.5 ns Rise time tr 4.9 ns Turn-off delay time td(off) 44 ns Fall time tf 28 ns VDD= -15V, VGS= -10V ID= -1A RG ≅ 6.0Ω, Gate charge Total Gate charge Qg 31.6 nC Gate-Source charge Qgs 4.3 nC Gate-Drain charge Qgd 6.2 nC VDS= -15V, VGS= -10V ID= -7.1A Source–Drain diode Diode forward voltage (*) VSD -0.80 -1.2 V IS= -1.7A,VGS=0V Reverse recovery time (‡) trr 16.2 ns Reverse recovery charge (‡) Qrr 10 nC IS= -2.2A,di/dt=100A/μs NOTES: (*) Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%. (†)Switching characteristics are independent of operating junction temperature. (‡)For design aid only, not subject to production testing Issue 1 - August 2008 4 © Diodes Incorporated 2008 www.zetex.com www.diodes.com |
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