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CEP6601 Datasheet(PDF) 3 Page - Chino-Excel Technology |
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CEP6601 Datasheet(HTML) 3 Page - Chino-Excel Technology |
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3 / 4 page  CEP6601/CEB6601 3 -VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics -VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics -VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature 2.8 2.4 2.0 1.6 1.2 0.8 0.4 VGS=-10V ID=-8A -100 -50 0 50 100 150 200 TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 VDS=VGS ID=-250µA -50 -25 0 25 50 75 100 125 150 -VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current 0.4 0.6 0.8 1.0 10 0 10 -1 10 1 10 2 1.4 1.2 VGS=0V 10 8 6 4 2 0 0 0.3 1.2 1.8 1.5 0.9 0.6 -VGS=3V -VGS=10,8,6V 25 20 15 10 5 0 0 2 4 6 1 3 5 TJ=125 C -55 C 25 C 1500 Crss 0 1250 1000 750 500 250 0 5 10 15 20 25 30 Ciss Coss |
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