ZXMP3A17E6

SEMICO NDUC TORS

ISSUE 2 - JUNE 2003

ADVANCE INFORMATION

4

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT CONDITIONS.

STATIC

Drain-Source Breakdown Voltage

-30

V

Zero Gate Voltage Drain Current

-0.5

Gate-Body Leakage

100

nA

Gate-Source Threshold Voltage

-1.0

V

I

D

Static Drain-Source On-State

Resistance

(1)

0.070

0.110

Forward Transconductance

(1)(3)

6.4

S

DYNAMIC

(3)

Input Capacitance

630

pF

f=1MHz

Output Capacitance

113

pF

Reverse Transfer Capacitance

78

pF

SWITCHING

(2) (3)

Turn-On Delay Time

1.74

ns

Rise Time

2.87

ns

Turn-Off Delay Time

29.2

ns

Fall Time

8.72

ns

Gate Charge

8.28

nC

Total Gate Charge

15.8

nC

Gate-Source Charge

1.84

nC

Gate-Drain Charge

2.8

nC

SOURCE-DRAIN DIODE

Diode Forward Voltage

(1)

-0.85

-1.2

V

Reverse Recovery Time

(3)

19.5

ns

di/dt= 100A/

µs

Reverse Recovery Charge

(3)

16.3

nC

ELECTRICAL CHARACTERISTICS

NOTES

(1) Measured under pulsed conditions. Width

=300µs. Duty cycle ≤ 2% .

(2) Switching characteristics are independent of operating junction temperature.

(3) For design aid only, not subject to production testing.