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ZXMP3A17E6TA Datasheet(PDF) 4 Page - Diodes Incorporated |
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ZXMP3A17E6TA Datasheet(HTML) 4 Page - Diodes Incorporated |
4 / 7 page ZXMP3A17E6 SEMICO NDUC TORS ISSUE 2 - JUNE 2003 ADVANCE INFORMATION 4 PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. STATIC Drain-Source Breakdown Voltage V(BR)DSS -30 V ID=-250 A, VGS=0V Zero Gate Voltage Drain Current IDSS -0.5 AVDS=-30V, VGS=0V Gate-Body Leakage IGSS 100 nA VGS= 20V, VDS=0V Gate-Source Threshold Voltage VGS(th) -1.0 V I D =-250 A, VDS=VGS Static Drain-Source On-State Resistance (1) RDS(on) 0.070 0.110 VGS=-10V, ID=-3.2A VGS=-4.5V, ID=-2.5A Forward Transconductance (1)(3) gfs 6.4 S VDS=-15V,ID=-3.2A DYNAMIC (3) Input Capacitance Ciss 630 pF VDS=-15V, VGS=0V, f=1MHz Output Capacitance Coss 113 pF Reverse Transfer Capacitance Crss 78 pF SWITCHING (2) (3) Turn-On Delay Time td(on) 1.74 ns VDD =-15V, ID=-1A RG≅6.0 ,VGS=-10V Rise Time tr 2.87 ns Turn-Off Delay Time td(off) 29.2 ns Fall Time tf 8.72 ns Gate Charge Qg 8.28 nC VDS=-15V,VGS=-5V, ID=-3.2A Total Gate Charge Qg 15.8 nC VDS=-15V,VGS=-10V, ID=-3.2A Gate-Source Charge Qgs 1.84 nC Gate-Drain Charge Qgd 2.8 nC SOURCE-DRAIN DIODE Diode Forward Voltage (1) VSD -0.85 -1.2 V TJ=25°C, IS=-2.5A, VGS=0V Reverse Recovery Time (3) trr 19.5 ns TJ=25°C, IF=-1.7A, di/dt= 100A/ µs Reverse Recovery Charge (3) Qrr 16.3 nC ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated). NOTES (1) Measured under pulsed conditions. Width =300µs. Duty cycle ≤ 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. |
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