ZXMP3A16G

ISSUE 3 - MAY 2007

4

PARAMETER

SYMBOL

MIN.

TYP.

MAX. UNIT CONDITIONS.

STATIC

Drain-Source Breakdown Voltage

V

(BR)DSS

-30

V

I

Zero Gate Voltage Drain Current

I

DSS

-1

AV

Gate-Body Leakage

I

GSS

100

nA

V

20V, V

Gate-Source Threshold Voltage

V

GS(th)

-1.0

V

I

D

=-250 A, V

Static Drain-Source On-State Resistance (1)

R

DS(on)

0.045

0.070

V

V

Forward Transconductance (1)(3)

g

fs

9.2

S

V

DYNAMIC (3)

Input Capacitance

C

iss

1022

pF

V

f=1MHz

Output Capacitance

C

oss

267

pF

Reverse Transfer Capacitance

C

rss

229

pF

SWITCHING(2) (3)

Turn-On Delay Time

t

d(on)

3.8

ns

V

R

, V

Rise Time

t

r

6.5

ns

Turn-Off Delay Time

t

d(off)

37.1

ns

Fall Time

t

f

21.4

ns

Gate Charge

Q

g

17.2

nC

V

Total Gate Charge

Q

g

29.6

nC

V

Gate-Source Charge

Q

gs

2.8

nC

Gate-Drain Charge

Q

gd

8.6

nC

SOURCE-DRAIN DIODE

Diode Forward Voltage (1)

V

SD

-0.85

-0.95

V

T

V

Reverse Recovery Time (3)

t

rr

21.7

ns

T

di/dt= 100A/ s

Reverse Recovery Charge (3)

Q

rr

16.1

nC

ELECTRICAL CHARACTERISTICS

NOTES

(1) Measured under pulsed conditions. Width

300µ s. Duty cycle

2% .

(2) Switching characteristics are independent of operating junction temperature.

(3) For design aid only, not subject to production testing.