ZXMN10A25K

Issue 2 - August 2006

4

www.zetex.com

© Zetex Semiconductors plc 2006

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

Static

Drain-source breakdown

voltage

100

V

Zero gate voltage drain current

0.5

Gate-body leakage

100

nA

Gate-source threshold voltage

2.0

4.0

V

Static drain-source on-state

NOTES:

(*) Measured under pulsed conditions. Pulse width

300 s; duty cycle

2%.

0.125

0.150

Forward transconductance(*)(‡)

7.3

S

Dynamic(‡)

Input capacitance

859

pF

f=1MHz

Output capacitance

57.3

pF

Reverse transfer capacitance

33

pF

(†) Switching characteristics are independent of operating junction temperature.

(‡) For design aid only, not subject to production testing.

Turn-on-delay time

4.9

ns

Rise time

3.7

ns

Turn-off delay time

17.7

ns

Fall time

9.4

ns

Gate charge

9.6

nC

Total gate charge

17.16

nC

Gate-source charge

3.77

nC

Gate drain charge

5.36

nC

Source-drain diode

Diode forward voltage(*)

0.85

0.95

V

Reverse recovery time(‡)

40.5

ns

di/dt=100A/ s

Reverse recovery charge(‡)

62

nC