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CEB12N6 Datasheet(PDF) 2 Page - Chino-Excel Technology |
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CEB12N6 Datasheet(HTML) 2 Page - Chino-Excel Technology |
2 / 4 page Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Forward Transconductance Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF 0.65 0.53 2 4 -100 100 1 Ω V nA nA µ A V S 2 Gate Body Leakage Current, Reverse On Characteristics b Dynamic Characteristics c Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics c Turn-On Delay Time Turn-Off Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b Test Condition VGS = 0V, ID = 250µA VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd ISf VSDg Typ Max 600 VDS =600V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VGS = VDS, ID = 250µA VGS = 10V, ID = 6A VDS = 25V, ID =6A VDD = 300V, ID =12A, VGS = 10V, RGEN = 25Ω VDS = 400V,ID = 12A, VGS = 10V VDS = 25V, VGS = 0V, f = 1.0 MHz VGS = 0V, IS = 12A 2000 220 11 39 58 149 40 78 116 298 80 51 11 19 66 12 1.4 10 pF pF pF ns ns ns ns nC nC nC A V CEP12N6/CEB12N6 CEF12N6 Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature . b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% . c.Guaranteed by design, not subject to production testing. d.Limited only by maximum temperature allowed . e.Pulse width limited by safe operating area . f.Full package IS(max) =6A . g.Full package VSD test condition IS =6A . |
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