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CEB10N6 Datasheet(PDF) 3 Page - Chino-Excel Technology |
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CEB10N6 Datasheet(HTML) 3 Page - Chino-Excel Technology |
3 / 4 page 3 VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature Ciss Coss Crss 2400 2000 1600 1200 800 400 0 0 5 10 15 20 25 3.0 0.0 2.5 2.0 1.5 1.0 0.5 VGS=10V ID=8.5A -100 -50 0 50 100 150 200 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 VDS=VGS ID=250µA -50 -25 0 25 50 75 100 125 150 VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature 0.4 0.6 0.8 1.0 10 0 10 -1 10 1 1.2 1.6 1.4 VGS=0V 0 1.5 3.0 4.5 -55 C 7.5 6.0 12 0 10 2 4 6 8 TJ=125C 25 C CEP10N6/CEB10N6 CEF10N6 10 8 6 4 2 0 0 5 10 20 15 25 30 12 VGS=4V VGS=10,9,8,7,6,5V |
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