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CEB07N7 Datasheet(PDF) 3 Page - Chino-Excel Technology |
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CEB07N7 Datasheet(HTML) 3 Page - Chino-Excel Technology |
3 / 4 page 3 VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature 2.6 2.2 1.8 1.4 1.0 0.6 0.2 VGS=10V ID=5A -100 -50 0 50 100 150 200 TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 VDS=VGS ID=250µA -50 -25 0 25 50 75 100 125 150 VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current 10 8 6 4 2 0 0 5 10 20 15 12 25 30 VGS=6V VGS=5V 7.5 5 2.5 0 0 2 4 6 10 8 10 TJ=125 C -55 C 25 C Crss 1200 1000 800 600 400 200 0 0 5 10 15 20 25 Ciss Coss VGS=10,9,8,7V 0.4 0.6 0.8 1.0 10 0 10 -1 10 1 1.2 1.6 1.4 VGS=0V CEP07N7/CEB07N7 CEF07N7 |
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