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ZXMN10A25GTA Datasheet(PDF) 4 Page - Diodes Incorporated |
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ZXMN10A25GTA Datasheet(HTML) 4 Page - Diodes Incorporated |
4 / 8 page ZXMN10A25G Issue 1 - July 2006 4 www.zetex.com © Zetex Semiconductors plc 2006 Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Symbol Min. Typ. Max. Unit Conditions Static Drain-source breakdown voltage V(BR)DSS 100 V ID= 250 A, VGS=0V Zero gate voltage drain current IDSS 0.5 AVDS= 100V, VGS=0V Gate-body leakage IGSS 100 nA VGS=±20V, VDS=0V Gate-source threshold voltage VGS(th) 2.0 4.0 V ID= 250 A, VDS=VGS Static drain-source on-state resistance (*) NOTES: (*) Measured under pulsed conditions. Pulse width 300 s; duty cycle 2%. RDS(on) 0.125 VGS= 10V, ID= 2.9A 0.150 VGS= 6V, ID = 2.6A Forward transconductance(*)(‡) gfs 7.3 S VDS= 15V, ID= 2.9A Dynamic(‡) Input capacitance Ciss 859 pF VDS= 50V, VGS=0V f=1MHz Output capacitance Coss 57 pF Reverse transfer capacitance Crss 33 pF Switching (†) (‡) (†) Switching characteristics are independent of operating junction temperature. (‡) For design aid only, not subject to production testing. Turn-on-delay time td(on) 4.9 ns VDD= 50V, ID= 1A RG≅6.0 , VGS= 10V Rise time tr 3.7 ns Turn-off delay time td(off) 18 ns Fall time tf 9.4 ns Gate charge Qg 9.6 nC VDS= 50V, VGS= 5V ID= 2.9A Total gate charge Qg 17 nC VDS= 50V, VGS= 10V ID= 2.9A Gate-source charge Qgs 3.8 nC Gate drain charge Qgd 5.4 nC Source-drain diode Diode forward voltage(*) VSD 0.85 0.95 V Tj=25°C, IS= 4A, VGS=0V Reverse recovery time(‡) trr 40.5 ns Tj=25°C, IS= 2.9A, di/dt=100A/ s Reverse recovery charge(‡) Qrr 62 nC |
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