ZXMN10A07F

SEMICO NDUC TORS

ISSUE 5 - JULY 2003

2

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

100

V

Gate-Source Voltage

20

V

(b)

(b)

(a)

0.8

0.6

0.7

A

Pulsed Drain Current

(c)

3.5

A

Continuous Source Current (Body Diode)

(b)

0.5

A

Pulsed Source Current (Body Diode)

(c)

3.5

A

(a)

Linear Derating Factor

625

5

mW

mW/°C

(b)

Linear Derating Factor

806

6.4

mW

mW/°C

Operating and Storage Temperature Range

-55 to +150

°C

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

VALUE

UNIT

Junction to Ambient

(a)

200

°C/W

Junction to Ambient

(b)

155

°C/W

THERMAL RESISTANCE

NOTES

(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions

(b) For a device surface mounted on FR4 PCB measured at t

5 secs.

(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02, pulse width 300 s - pulse width limited by maximum junction temperature. Refer to

Transient Thermal Impedance graph.