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ZXMN2A01FTA Datasheet(PDF) 2 Page - Diodes Incorporated |
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ZXMN2A01FTA Datasheet(HTML) 2 Page - Diodes Incorporated |
2 / 7 page ZXMN2A01F SEMICO NDUC TORS ISSUE 2 - FEBRUARY 2006 2 PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a) RθJA 200 °C/W Junction to Ambient (b) RθJA 155 °C/W NOTES: (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t 5 secs. (c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300 s - pulse width limited by maximum junction temperature. THERMAL RESISTANCE PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGS 12 V Continuous Drain Current VGS=10V; TA=25°C (b) VGS=10V; TA=70°C (b) VGS=10V; TA=25°C (a) ID 2.2 1.7 1.9 A Pulsed Drain Current (c) IDM 8A Continuous Source Current (Body Diode) (b) IS 1.29 A Pulsed Source Current (Body Diode) (c) ISM 8A Power Dissipation at TA=25°C (a) Linear Derating Factor PD 625 5 mW mW/°C Power Dissipation at TA=25°C (b) Linear Derating Factor PD 806 6.4 mW mW/°C Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ABSOLUTE MAXIMUM RATINGS |
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