ZXMHC10A07T8

SEMICO NDUC TORS

ISSUE 2 - JUNE 2005

4

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT CONDITIONS

STATIC

Drain-Source Breakdown Voltage

100

V

Zero Gate Voltage Drain Current

1

Gate-Body Leakage

100

nA

Gate-Source Threshold Voltage

2.0

4.0

V

Static Drain-Source On-State

Resistance

(1)

0.7

0.9

Forward Transconductance

(1) (3)

1.6

S

DYNAMIC

(3)

Input Capacitance

138

pF

f=1MHz

Output Capacitance

12

pF

Reverse Transfer Capacitance

6pF

SWITCHING

(2) (3)

Turn-On-Delay Time

1.8

ns

Rise Time

1.5

ns

Turn-Off Delay Time

4.1

ns

Fall Time

2.1

ns

Total Gate Charge

2.9

nC

Gate-Source Charge

0.7

nC

Gate Drain Charge

1.0

nC

SOURCE-DRAIN DIODE

Diode Forward Voltage

(1)

0.95

V

Reverse Recovery Time

(3)

27

ns

di/dt=100A/ s

Reverse Recovery Charge

(3)

12

nC

N-Channel

ELECTRICAL CHARACTERISTICS (at T

NOTES

(1) Measured under pulsed conditions. Pulse width

300 s; duty cycle

2%.

(2) Switching characteristics are independent of operating junction temperature.

(3) For design aid only, not subject to production testing.