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RJL5020DPK Datasheet(PDF) 3 Page - Renesas Technology Corp |
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RJL5020DPK Datasheet(HTML) 3 Page - Renesas Technology Corp |
3 / 7 page RJL5020DPK Preliminary R07DS0239EJ0500 Rev.5.00 Page 3 of 6 Jan 07, 2011 Main Characteristics 100 80 60 40 20 0 04 8 12 16 20 Drain to Source Voltage VDS (V) Typical Output Characteristics Gate to Source Voltage VGS (V) Typical Transfer Characteristics 1 10 100 0.1 1 0.01 Drain Current ID (A) Static Drain to Source on State Resistance vs. Drain Current (Typical) Drain to Source Voltage VDS (V) Maximum Safe Operation Area Case Temperature Tc ( °C) Static Drain to Source on State Resistance vs. Temperature (Typical) 02468 0 0.1 0.2 0.4 0.3 0.5 -25 0 50 25 75 100 125 150 0.01 0.1 1 10 100 1000 0.1 1 10 100 1000 Tc = 25 °C 1 shot Operation in this area is limited by R DS(on) 1 10 100 1000 100 10 Reverse Drain Current IDR (A) Body-Drain Diode Reverse Recovery Time (Typical) di / dt = 100 A / μs VGS = 0, Ta = 25°C 10 μs PW = 100 μs VGS = 10 V Pulse Test 19 A ID = 38 A VDS = 10 V Pulse Test Tc = 75 °C 25 °C −25°C VGS = 10 V Ta = 25 °C Pulse Test 10 A 4.2 V 4.4 V 4.6 V 4.8 V 5 V VGS = 4 V 10 V Ta = 25 °C Pulse Test 5.2 V 5.4 V 6 V 100 1 10 0.1 |
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