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BCR8CS-12LB-T11B00 Datasheet(PDF) 1 Page - Renesas Technology Corp |
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BCR8CS-12LB-T11B00 Datasheet(HTML) 1 Page - Renesas Technology Corp |
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1 / 9 page  R07DS0223EJ0400 Rev.4.00 Page 1 of 8 Dec 14, 2010 Preliminary Datasheet BCR8CS-12LB Triac Medium Power Use Features I T (RMS) : 8 A V DRM : 600 V I FGTI, IRGTI, IRGT III : 30 mA (20 mA) Note6 The product guaranteed maximum junction temperature of 150°C Non-Insulated Type Planar Passivation Type Outline 2, 4 1 3 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal 4. T2 Terminal 1 2 3 RENESAS Package code: PRSS0004AB-A (Package name: TO-220S EOL OL P OL P OL P OL PKG 4 4 LP OL P L L OL P L L OL P : P : P 220S) 220S) 1 2 3 4 RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) Applications Solid state relay, hybrid IC Maximum Ratings Voltage class Parameter Symbol 12 Unit Repetitive peak off-state voltage Note1 VDRM 600 V Non-repetitive peak off-state voltage Note1 VDSM 720 V Parameter Symbol Ratings Unit Conditions RMS on-state current IT (RMS) 8 A Commercial frequency, sine full wave 360° conduction, Tc = 130 CNote3 Surge on-state current ITSM 80 A 60Hz sinewave 1 full cycle, peak value, non-repetitive I 2t for fusing I 2t 26 A 2s Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Peak gate power dissipation PGM 5 W Average gate power dissipation PG (AV) 0.5 W Peak gate voltage VGM 10 V Peak gate current IGM 2 A Junction temperature Tj – 40 to +150 C Storage temperature Tstg – 40 to +150 C Mass — 1.3 g Typical value Notes: 1. Gate open. R07DS0223EJ0400 (Previous: REJ03G0468-0300) Rev.4.00 Dec 14, 2010 |
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