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MIC2954-03BZ Datasheet(PDF) 11 Page - Micrel Semiconductor |
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MIC2954-03BZ Datasheet(HTML) 11 Page - Micrel Semiconductor |
11 / 15 page Micrel, Inc. MIC2954 September 2007 11 M9999-090607 * See Application Information Figure 1. /Error Output Timing or about 0.01µF. When doing this, the output capacitor must be increased to 3.3µF to maintain stability. These changes reduce the output noise from 430µV to 100µVrms for a100kHz bandwidth at 5V output. With the bypass capacitor added, noise no longer scales with output voltage so that improvements are more dramatic at higher output voltages. Automotive Applications The MIC2954 is ideally suited for automotive applica- tions for a variety of reasons. It will operate over a wide range of input voltages with very low dropout voltages (40mV at light loads), and very low quiescent currents (75µA typical). These features are necessary for use in battery powered systems, such as automobiles. It is a “bulletproof” device with the ability to survive both reverse battery (negative transients up to 20V below ground), and load dump (positive transients up to 60V) conditions. A wide operating temperature range with low temperature coefficients is yet another reason to use these versatile regulators in automotive designs. Thermal Calculations Layout Considerations The MIC2954-07BM/-08BM (8-pin surface-mount pack- age) has the following thermal characteristics when mounted on a single layer copper-clad printed circuit board. PC Board Dielectric Material θJA FR4 160°C/W Ceramic 120°C/W Multilayer boards having a ground plane, wide traces near the pads, and large supply bus lines provide better thermal conductivity. Our calculations will use the “worst case” value of 160°C/W, which assumes no ground plane, minimum trace widths, and a FR4 material board. Pad Layout (minimum recommended geometry) Nominal Power Dissipation and Die Temperature The MIC2954-07BM/-08BM at a 55°C ambient temp- erature will operate reliably at up to 440mW power dissipation when mounted in the “worst case” manner described above. This power level is equivalent to a die temperature of 125°C, the recommended maximum temperature for nonmilitary grade silicon integrated circuits. |
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