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MIC2199 Datasheet(PDF) 9 Page - Micrel Semiconductor

Part # MIC2199
Description  300kHz 4mm4mm Synchronous Buck Converter
Download  14 Pages
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Manufacturer  MICREL [Micrel Semiconductor]
Direct Link  http://www.micrel.com
Logo MICREL - Micrel Semiconductor

MIC2199 Datasheet(HTML) 9 Page - Micrel Semiconductor

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Micrel, Inc.
MIC2199.
January 2010
9
M9999-011310
Applications Information
Followingapplicationsinformationincludescomponentselec-
tion and design guidelines.
Inductor Selection
Valuesforinductance,peak,andRMScurrentsarerequired
to select the output inductor. The input and output voltages
and the inductance value determine the peak-to-peak induc-
tor ripple current. Generally, higher inductance values are
used with higher input voltages. Larger peak-to-peak ripple
currents will increase the power dissipation in the inductor
andMOSFETs.Largeroutputripplecurrentswillalsorequire
more output capacitance to smooth out the larger ripple cur-
rent.Smallerpeak-to-peakripplecurrentsrequirealarger
inductance value and therefore a larger and more expensive
inductor. A good compromise between size, loss and cost is
tosettheinductorripplecurrenttobeequalto20%ofthe
maximum output current.
The inductance value is calculated by the equation below.
L
V
(V
)
V
0.2
OUT
IN(max)
OUT
IN(max)
S
OUT(max)
=
×
×
×
- V
f ×
I
where:
fS= switching frequency
0.2 = ratio of AC ripple current to DC output current
VIN(max) = maximum input voltage
The peak-to-peak inductor current (AC ripple current) is:
I
V(VV
)
Vf
L
PP
OUT
IN(max)
OUT
IN(max)
S
=
×−
××
Thepeakinductorcurrentisequaltotheaverageoutputcurrent
plus one half of the peak-to-peak inductor ripple current.
II
0.5I
PK
OUT(max)
PP
=+
×
TheRMSinductorcurrentisusedtocalculatetheI2×R losses
in the inductor.
II
1 1
3
I
I
INDUCTOR(rms)
OUT(max)
P
OUT(max)
2
+
Maximizingefficiencyrequirestheproperselectionofcore
material and minimizing the winding resistance. The high
frequency operation of the MIC2199 requires the use of fer-
rite materials for all but the most cost sensitive applications.
Lower cost iron powder cores may be used but the increase
incorelosswillreducetheefficiencyofthepowersupply.
This is especially noticeable at low output power. The winding
resistancedecreasesefficiencyatthehigheroutputcurrent
levels. The winding resistance must be minimized although
this usually comes at the expense of a larger inductor.
The power dissipated in the inductor is equal to the sum
of the core and copper losses. At higher output loads, the
corelossesareusuallyinsignificantandcanbeignored.At
loweroutputcurrents,thecorelossescanbeasignificant
contributor. Core loss information is usually available from
the magnetics vendor.
Copper loss in the inductor is calculated by the equation
below:
PI
R
INDUCTORCu
INDUCTOR(rms)
WINDING
2
The resistance of the copper wire, RWINDING, increases with
temperature.The value of the winding resistance used should
be at the operating temperature.
R
R
1 0.0042 (T
T
)
WINDING(hot)
WINDING(20 C)
HOT
20 C
=
× +
×
(
)
°
°
where:
THOT = temperature of the wire under operating load
T20°C = ambient temperature
RWINDING(20°C) is room temperature winding
resistance
(usuallyspecifiedbythemanufacturer)
Current-Sense Resistor Selection
Lowinductancepowerresistors,suchasmetalfilmresistors
should be used. Most resistor manufacturers make low induc-
tanceresistorswithlowtemperaturecoefficients,designed
specificallyforcurrent-senseapplications.Bothresistance
and power dissipation must be calculated before the resis-
tor is selected. The value of RSENSE is chosen based on the
maximum output current and the maximum threshold level.
The power dissipated is based on the maximum peak output
current at the minimum overcurrent threshold limit.
R
55mV
I
SENSE
OUT(max)
=
The maximum overcurrent threshold is:
I
95mV
R
OVERCURRENT(max)
CS
=
The maximum power dissipated in the sense resistor is:
PI
R
D(R
)
OVERCURRENT(max)
2
CS
SENSE
MOSFET Selection
External N-Channel logic-level power MOSFETs must be
used for the high- and low-side switches. The MOSFET
gate-to-source drive voltage of the MIC2199 is regulated by
an internal 5V VDDregulator.Logic-levelMOSFETs,whose
operationisspecifiedatVGS = 4.5V must be used.
Itisimportanttonotetheon-resistanceofaMOSFETin-
creases with increasing temperature. A 75°C rise in junction
temperaturewillincreasethechannelresistanceoftheMOS-
FETby50%to75%oftheresistancespecifiedat25°C.This
change in resistance must be accounted for when calculating
MOSFETpowerdissipation.
TotalgatechargeisthechargerequiredtoturntheMOSFET
onandoffunderspecifiedoperatingconditions(VDS and
VGS). The gate charge is supplied by the MIC2199 gate drive
circuit. At 500kHz switching frequency, the gate charge can
beasignificantsourceofpowerdissipationintheMIC2199.
At low output load this power dissipation is noticeable as a
reductioninefficiency.Theaveragecurrentrequiredtodrive
thehigh-sideMOSFETis:
IQ
f
G[high-side](avg)
GS


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