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UBA2211BTN1 Datasheet(PDF) 11 Page - NXP Semiconductors |
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UBA2211BTN1 Datasheet(HTML) 11 Page - NXP Semiconductors |
11 / 19 page UBA2211 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Objective data sheet Rev. 2 — 3 January 2011 11 of 19 NXP Semiconductors UBA2211 Half-bridge power IC family for CFL lamps 9. Thermal characteristics [1] In accordance with IEC 60747-1 10. Characteristics Table 4. Thermal characteristics Symbol Parameter Conditions Typ Unit Rth(j-a) thermal resistance from junction to ambient in free air [1] 95 K/W Rth(j-c) thermal resistance from junction to case in free air [1] 16 K/W Table 5. Characteristics Tj = 25 °C; all voltages are measured with respect to SGND; positive currents flow into the IC. Symbol Parameter Conditions Min Typ Max Unit High-voltage supply VHV voltage on pin HV t < 10 minutes; IHV <30 μA 0 - 550 V VFS voltage on pin FS t < 10 minutes; IHV <30 μA 0 - 564 V Low-voltage supply Start-up state IHV current on pin HV VHV = 100 V - 0.85 - mA VDD(start) start supply voltage oscillation start 10.7 11.7 12.7 V VDD(stop) stop supply voltage oscillation stop 8 8.5 9 V VDD(hys) hysteresis of supply voltage start − stop 3 3.5 4 V VDD(reg) regulation supply voltage - 13.8 - V Isink sink current capability of VDD regulator 6 - - mA Output stage Ron on-state resistance high-side transistor: [1] UBA2211AX; VHV = 310 V; ID = 100 mA - 13.5 - Ω UBA2211BX; VHV = 310 V; ID =100 mA - 9.3 - Ω UBA2211CX; VHV = 310 V; ID = 100 mA - 6.6 - Ω low-side transistor: [1] UBA2211AX; ID = 100 mA - 13.5 - Ω UBA2211BX; ID =100 mA - 8.2 - Ω UBA2211CX; ID = 100 mA - 6.6 - Ω Ron(150)/ Ron(25) on-state resistance ratio (150 °C to 25 °C) -1.7 - VF forward voltage HS; IF = 200 mA - - 2.0 V LS; IF = 200 mA - - 2.0 V bootstrap diode; IF = 1 mA 0.7 1.0 1.3 V tno non-overlap time 1.05 1.35 1.65 μs VFS voltage on pin FS lockout voltage 3.6 4.2 4.8 V IFS current on pin FS VHV =310 V; VFS = 12 V 10 14 18 μA |
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