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RB521CS30L Datasheet(PDF) 6 Page - NXP Semiconductors |
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RB521CS30L Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 13 page RB521CS30L All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 1 — 24 January 2011 6 of 13 NXP Semiconductors RB521CS30L 100 mA low VF MEGA Schottky barrier rectifier f=1MHz; Tamb =25 °C Fig 5. Diode capacitance as a function of reverse voltage; typical values Tj = 150 °C (1) δ =0.1 (2) δ =0.2 (3) δ =0.5 (4) δ =1 Tj = 125 °C (1) δ =1; DC (2) δ = 0.9; f = 20 kHz (3) δ = 0.8; f = 20 kHz (4) δ = 0.5; f = 20 kHz Fig 6. Average forward power dissipation as a function of average forward current; typical values Fig 7. Average reverse power dissipation as a function of reverse voltage; typical values VR (V) 030 20 10 006aac504 5 10 15 Cd (pF) 0 IF(AV) (A) 0.00 0.15 0.10 0.05 006aac505 0.02 0.04 0.06 PF(AV) (W) 0.00 (1) (2) (3) (4) 006aac506 VR (V) 030 20 10 0.04 0.06 0.02 0.08 0.10 PR(AV) (W) 0.00 (1) (2) (3) (4) |
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