BZV55_SER

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© NXP B.V. 2011. All rights reserved.

Product data sheet

Rev. 5 — 26 January 2011

2 of 13

NXP Semiconductors

BZV55 series

Voltage regulator diodes

3.

Ordering information

[1]

The series consists of 74 types with nominal working voltages from 2.4 V to 75 V.

4.

Marking

5.

Limiting values

[1]

[2]

Device mounted on a ceramic substrate of 10

 10  0.6 mm.

6.

Thermal characteristics

[1]

Device mounted on a ceramic substrate of 10

 10  0.6 mm.

Table 3.

Ordering information

Type number

Package

Name

Description

Version

BZV55-B2V4 to

BZV55-C75[1]

-

hermetically sealed glass surface-mounted

package; 2 connectors

SOD80C

Table 4.

Marking codes

Type number

Marking code

BZV55-B2V4 to BZV55-C75

marking band

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

forward current

-

250

mA

non-repetitive peak

reverse current

[1] -see

Table 8

and 9

non-repetitive peak

reverse power dissipation

[1] -40

W

total power dissipation

[2] -400

mW

[2] -500

mW

storage temperature

65

+200

C

junction temperature

65

+200

C

Table 6.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

thermal resistance from

junction to ambient

in free air

[1] -

-

380

K/W

thermal resistance from

junction to solder point

-

-

300

K/W