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ZXGD3001E6 Datasheet(PDF) 3 Page - Diodes Incorporated |
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ZXGD3001E6 Datasheet(HTML) 3 Page - Diodes Incorporated |
3 / 8 page ZXGD3001E6 Issue 1 - October 2007 3 www.zetex.com © Zetex Semiconductors plc 2007 Absolute maximum ratings Thermal resistance NOTES: (a) For a device surface mounted on 25mm x 25mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For device with two active dice running at equal power. (c) Pulse width <=300 s limit repetition rate to comply with maximum junction temperature. Parameter Symbol Limit Unit Supply voltage VCC 12 V Input voltage VIN 12 V Peak sink current(c) I(sink)PK 9A Source current @ IIN1 + IIN2 =10mA(a) I(source) 4.2 A Sink current @ IIN1 + IIN2 =10mA(a) I(sink) 2.2 A Input current(c) IIN1, IIN2 1A Power dissipation at TA =25°C(a)(b) Linear derating factor PD 1.1 8.8 W mW/ °C Operating and storage temperature range Tj, Tstg -55 to +150 °C Parameter Symbol Value Unit Junction to ambient(a)(b) R JA 113 °C/W |
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