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ZTX857 Datasheet(PDF) 2 Page - Diodes Incorporated |
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ZTX857 Datasheet(HTML) 2 Page - Diodes Incorporated |
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2 / 3 page  NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ISSUE 1 APRIL 94 FEATURES * 300 Volt VCEO * 3 Amps continuous current * Up to 5 Amps peak current * Very low saturation voltage *Ptot= 1.2 Watt ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 330 V Collector-Emitter Voltage VCEO 300 V Emitter-Base Voltage VEBO 6V Peak Pulse Current ICM 5A Continuous Collector Current IC 3A Practical Power Dissipation* Ptotp 1.58 W Power Dissipation at Tamb=25°C Ptot 1.2 W Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated) PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO 330 475 V IC=100µA Collector-Emitter Breakdown Voltag V(BR)CER 330 475 V IC=1µA, RB ≤1KΩ Collector-Emitter Breakdown Voltage V(BR)CEO 300 350 V IC=10mA* Emitter-Base Breakdown Voltage V(BR)EBO 68 V IE=100µA Collector Cut-Off Current ICBO 50 1 nA µ A VCB=300V VCB=300V, Tamb=100°C Collector Cut-Off Current ICER R ≤1KΩ 50 1 nA µ A VCB=300V VCB=300V, Tamb=100°C Emitter Cut-Off Current IEBO 10 nA VEB=6V Collector-Emitter Saturation Voltage VCE(sat) 50 80 140 170 100 140 200 250 mV mV mV mV IC=0.5A, IB=50mA* IC=1A, IB=100mA* IC=2A, IB=200mA* IC=3A, IB=600mA* Base-Emitter Saturation Voltage VBE(sat) 870 1000 mV IC=2A, IB=200mA* E-Line TO92 Compatible ZTX857 3-303 C B E ELECTRICAL CHARACTERISTICS (at Tamb= 25°C) PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Base-Emitter Turn-On Voltage VBE(on) 810 950 mV IC=2A, VCE=5V* Static Forward Current Transfer Ratio hFE 100 100 15 200 200 25 15 300 IC=10mA, VCE=5V IC=500mA, VCE=10V* IC=2A, VCE=10V* IC=3A, VCE=10V* Transition Frequency fT 80 MHz IC=100mA, VCE=10V f=100MHz Output Capacitance Cobo 11 pF VCB=20V, f=1MHz Switching Times ton toff 100 5300 ns ns IC=250mA, IB1=25mA IB2=25mA, VCC=50V *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% THERMAL CHARACTERISTICS PARAMETER SYMBOL MAX. UNIT Thermal Resistance: Junction to Ambient Junction to Case Rth(j-amb) Rth(j-case) 150 50 °C/W °C/W ZTX857 -40 2.0 1.0 0.0001 50 150 100 Derating curve T -Temperature (°C) Maximum transient thermal impedance Pulse Width (seconds) 10 100 1 0.1 0.01 4.0 3.0 -20 0 20 40 60 80 100 120 200 180 160 140 t1 tP D=t1/tP Case te m peratu re Ambien t tem peratur e D.C. D=0.6 D=0.2 D=0.1 Single Pulse 0.001 0 D=0.05 3-304 |
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Similar Description - ZTX857 |
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