Vishay Siliconix

SiR880DP

New Product

Document Number: 65702

S10-0635-Rev. A, 22-Mar-10

www.vishay.com

1

N-Channel 80 V (D-S) MOSFET

FEATURES

•

Halogen-free According to IEC 61249-2-21

Definition

•

•

•

100 % UIS Tested

•

Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

Fixed Telecom

•

POL

•

DC/DC Converter

•

Primary Side Switch

PRODUCT SUMMARY

a

80

60

23 nC

60

60

Ordering Information: SiR880DP-T1-GE3 (Lead (Pb)-free and Halogen-free)

1

2

3

4

5

6

7

8

S

S

S

G

D

D

D

D

6.15 mm

5.15 mm

Bottom View

N-Channel MOSFET

G

D

S

Notes:

a. Package limited.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 10 s.

(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection.

e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under Steady State conditions is 54 °C/W.

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

80

V

Gate-Source Voltage

± 20

A

Pulsed Drain Current

100

Continuous Source-Drain Diode Current

Single Pulse Avalanche Current

L = 0.1 mH

35

Single Pulse Avalanche Energy

61

mJ

Maximum Power Dissipation

104

W

66.6

Operating Junction and Storage Temperature Range

- 55 to 150

°C

260

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t

≤ 10 s

15

20

°C/W

Maximum Junction-to-Case (Drain)

Steady State

0.9

1.2