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SIHB16N50C-E3 Datasheet(PDF) 2 Page - Vishay Siliconix |
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SIHB16N50C-E3 Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 8 page www.vishay.com Document Number: 91401 2 S10-0811-Rev. A, 12-Apr-10 SiHP16N50C, SiHB16N50C, SiHF16N50C Vishay Siliconix Note a. When mounted on 1" square PCB (FR-4 or G-10 material). Note • The information shown here is a preliminary product proposal, not a commercial product data sheet. Vishay Siliconix is not committed to produce this or any similar product. This information should not be used for design purposes, nor construed as an offer to furnish or sell such products. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TO220-AB D2PAK (TO-263) TO-220 FULLPAK UNIT Maximum Junction-to-Ambient RthJA 62 65 °C/W Maximum Junction-to-Case (Drain) RthJC 0.5 3.3 Junction-to-Ambient (PCB mount)a RthJA 40 - SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 500 - - V VDS Temperature Coefficient ΔV DS/TJ Reference to 25 °C, ID = 1 mA - 0.6 - V/°C Gate-Source Threshold Voltage (N) VGS(th) VDS = VGS, ID = 250 μA 3.0 - 5.0 V Gate-Source Leakage IGSS VGS = ± 30 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 500 V, VGS = 0 V - - 50 μA VDS = 400 V, VGS = 0 V, TJ = 125 °C - - 250 Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 8 A - 0.31 0.38 Ω Forward Transconductancea gfs VDS = 50 V, ID = 3 A - 3 - S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = 25 V, f = 1.0 MHz - 1900 - pF Output Capacitance Coss - 230 - Reverse Transfer Capacitance Crss -24 - Total Gate Charge Qg VGS = 10 V ID = 16 A, VDS = 400 V -45 68 nC Gate-Source Charge Qgs -18 - Gate-Drain Charge Qgd -22 - Turn-On Delay Time td(on) VDD = 250 V, ID = 16 A, Rg = 9.1 Ω, VGS = 10 V -27 - ns Rise Time tr - 156 - Turn-Off Delay Time td(off) -29 - Fall Time tf -31 - Gate Input Resistance Rg f = 1 MHz, open drain - 1.6 - Ω Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS MOSFET symbol showing the integral reverse p - n junction diode -- 16 A Pulsed Diode Forward Current ISM -- 30 Body Diode Voltage VSD TJ = 25 °C, IS = 10 A, VGS = 0 V - - 1.8 V Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = IS, dI/dt = 100 A/μs, VR = 20 V - 555 - ns Body Diode Reverse Recovery Charge Qrr -5.5 - μC Body Diode Reverse Recovery Current IRRM -18 - A S D G |
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