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SIHB16N50C-E3 Datasheet(PDF) 7 Page - Vishay Siliconix |
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SIHB16N50C-E3 Datasheet(HTML) 7 Page - Vishay Siliconix |
7 / 8 page Document Number: 91401 www.vishay.com S10-0811-Rev. A, 12-Apr-10 7 SiHP16N50C, SiHB16N50C, SiHF16N50C Vishay Siliconix Fig. 15 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91401. P.W. Period dI/dt Diode recovery dV/dt Ripple ≤ 5 % Body diode forward drop Re-applied voltage Reverse recovery current Body diode forward current VGS = 10 V* VDD ISD Driver gate drive D.U.T. ISD waveform D.U.T. VDS waveform Inductor current D = P.W. Period + - + + + - - - * VGS = 5 V for logic level devices Peak Diode Recovery dV/dt Test Circuit RG VDD • dV/dt controlled by RG • Driver same type as D.U.T. • ISD controlled by duty factor "D" • D.U.T. - device under test D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer |
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