Document Number: 91401

www.vishay.com

S10-0811-Rev. A, 12-Apr-10

7

SiHP16N50C, SiHB16N50C, SiHF16N50C

Vishay Siliconix

Fig. 15 - For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon

Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and

P.W.

Period

dI/dt

Diode recovery

dV/dt

Ripple

≤ 5 %

Body diode

forward drop

Re-applied

voltage

Reverse

recovery

current

Body diode forward

current

Driver gate drive

Inductor current

D =

P.W.

Period

+

-

+

+

+

-

-

-

Peak Diode Recovery dV/dt Test Circuit

• Driver same type as D.U.T.

• D.U.T. - device under test

D.U.T.

Circuit layout considerations

• Low stray inductance

• Ground plane

• Low leakage inductance

current transformer