ZTX605 datasheet(2/3 Pages) DIODES

Part #	ZTX605

Description	NPN SILICON PLANAR MEDIUM POWER

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Manufacturer	DIODES [Diodes Incorporated]

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NPN SILICON PLANAR MEDIUM POWER

DARLINGTON TRANSISTORS

ISSUE 1 MARCH 94

FEATURES

* 120 Volt VCEO

* 1 Amp continuous current

* Gain of 2K at IC=1 Amp

*Ptot= 1 Watt

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

ZTX604

ZTX605

UNIT

Collector-Base Voltage

VCBO

120

140

V

Collector-Emitter Voltage

VCEO

100

120

V

Emitter-Base Voltage

VEBO

10

V

Peak Pulse Current

ICM

4A

Continuous Collector Current

IC

1A

Power Dissipation at Tamb=25°C

derate above 25°C

Ptot

1

5.7

W

mW/ °C

Operating and Storage Temperature Range

Tj:Tstg

-55 to +200

°C

ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated).

PARAMETER

SYMBOL

ZTX604

ZTX605

UNIT

CONDITIONS.

MIN.

MAX. MIN.

MAX.

Collector-Base

Breakdown Voltage

V(BR)CBO

120

140

V

IC=100µA

Collector-Emitter

Breakdown Voltage

V(BR)CEO

100

120

V

IC=10mA*

Emitter-Base

Breakdown Voltage

V(BR)EBO

10

V

IE=100µA

Collector Cut-Off

Current

ICBO

0.01

10

0.01

10

µ

A

µ

A

µ

A

µ

A

VCB=100V

VCB=120V

VCB=100V,Tamb=100°C

VCB=120V,Tamb=100°C

Emitter Cut-Off

Current

IEBO

0.1

µ

A

VEB=8V

Colllector-Emitter

Cut-Off Current

ICES

10

µ

A

VCES=100V

VCES=120V

Collector-Emitter

Saturation Voltage

VCE(sat)

1.0

1.5

1.0

1.5

V

IC=250mA, IB=0.25mA*

IC=1A, IB=1mA*

Base-Emitter

Saturation Voltage

VBE(sat)

1.8

V

IC=1A, IB=1mA*

Base-Emitter

Turn-On Voltage

VBE(on)

1.7

V

IC=1A, VCE=5V*

ZTX604

ZTX605

3-212

ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated).

PARAMETER

SYMBOL

ZTX604

ZTX605

UNIT CONDITIONS.

MIN.

MAX. MIN.

MAX.

Static Forward

Current Transfer Ratio

hFE

2K

5K

2K

0.5K

100K

2K

5K

2K

0.5K

100K

IC=50mA, VCE=5V

IC=500mA, VCE=5V*

IC=1A, VCE=5V*

IC=2A, VCE=5V*

Transition Frequency

fT

150

MHz

IC=100mA, VCE=10V

f=20MHz

Input Capacitance

Cibo

90 Typical

pF

VEB=500mV, f=1MHz

Output Capacitance

Cobo

15 Typical

pF

VCB=10V, f=1MHz

Switching Times

ton

0.5 Typical

µ

s

IC=500mA, VCE=10V

IB1=IB2=0.5mA

toff

1.6 Typical

µ

s

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%

The maximum permissible operational temperature can be obtained from this graph using the

following equation

Tamb(max) =

Power(max) − Power(act)

0.0057

+25°C

Tamb(max)= Maximum operating ambient temperature

Power(max) = Maximum power dissipation figure, obtained from the above graph for a given VCE

and source resistance (RS)

Power(actual)= Actual power dissipation in users circuit

C

B

E

E-Line

TO92 Compatible

ZTX604

ZTX605

Voltage Derating Graph

VCE - Collector-Emitter Voltage (Volts)

1.0

0.8

0.6

0.4

0

0.2

1

10

100

DC Conditions

R5 = 100KΩ

R5 = ∞

200

R5 = 1MΩ

R5 = 20KΩ

ZTX605

ZTX604

3-213

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