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MC34704AR2 Datasheet(PDF) 11 Page - Freescale Semiconductor, Inc |
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MC34704AR2 Datasheet(HTML) 11 Page - Freescale Semiconductor, Inc |
11 / 54 page Analog Integrated Circuit Device Data Freescale Semiconductor 11 34704 ELECTRICAL CHARACTERISTICS STATIC ELECTRICAL CHARACTERISTICS REGULATOR 4 Output Voltage Range VOUT 0.6 1.8 3.6 V Output Accuracy - -2.0 - 2.0 % Line/Load Regulation(13) REGLN/LD -1.0 - 1.0 % Feedback Reference Voltage VFB - 0.600(14) - V Dynamic Voltage Scaling Range VDYN -10 - 10 % Dynamic Voltage Scaling Step Size VDYN_STEP - 1.0 - % Continuous Output Current(13) IOUT - 100 300 mA Over-current Limit (Detected in buck high side FET) ILIM_ION - 1.5 - A Short-circuit Current Limit (Detected in buck high side FET) ISHORT_ION - 2.25 - A Over-current Limit Accuracy - -20 - 20 % N-CH Buck Switch Power MOSFET RDS(ON) RDS(ON)-SW - 200 - m Ω N-CH Buck Synch. Power MOSFET RDS(ON) RDS(ON)-SY - 600 - m Ω N-CH Boost Switch Power MOSFET RDS(ON) RDS(ON)-SW - 200 - m Ω N-CH Boost Synch. Power MOSFET RDS(ON) RDS(ON)-SY - 600 - m Ω Discharge MOSFET RDS(ON) RDS(ON)-DIS - 70 - Ω Thermal Shutdown Threshold(13) TSD - 170 - °C Thermal Shutdown Hysteresis(13) TSD-HYS - 25 - °C PVIN4 Leakage Current (Off State) @25°C IPVIN4_LKG - - 1.0 μA SW4D Leakage Current (Off State) @25°C ISW4D_LKG - - 1.0 μA SW4U Leakage Current (Off State) @25°C ISW4U_LKG - - 1.0 μA REGULATOR 5 Output Voltage Range VOUT 0.6 3.3 3.6 V Output Accuracy - -2.0 - 2.0 % Line/Load Regulation(13) REGLN/LD -1.0 - 1.0 % Feedback Reference Voltage VFB - 0.600(14) - V Dynamic Voltage Scaling Range VDYN -17.5 - 17.5 % Dynamic Voltage Scaling Step Size VDYN_STEP - 2.5 - % Continuous Output Current(13) IOUT - 150 500 mA Over-current Limit (Detected in buck high side FET) ILIM_ION - 1.4 - A Short-circuit Current Limit (Detected in buck high side FET) ISHORT_ION - 2.1 - A Over-current Limit Accuracy - -20 - 20 % N-CH Buck Switch Power MOSFET RDS(ON) RDS(ON)-SW - 120 - m Ω N-CH Buck Synch. Power MOSFET RDS(ON) RDS(ON)-SY - 1000 - m Ω N-CH Boost Switch Power MOSFET RDS(ON) RDS(ON)-SW - 120 - m Ω N-CH Boost Synch. Power MOSFET RDS(ON) RDS(ON)-SY - 120 - m Ω Discharge MOSFET RDS(ON) RDS(ON)-DIS - 70 - Ω Thermal Shutdown Threshold(13) TSD - 170 - °C Thermal Shutdown Hysteresis(13) TSD-HYS - 25 - °C Notes: 13. Guaranteed by Design 14. VFB is 0.6V when the part ist powered up and no DVS is changed. DVS is achieved by modifying VFB reference. Table 4. Static Electrical Characteristics (continued) Characteristics noted under conditions 2.7 V ≤ VIN ≤ 5.5 V, -20°C ≤ TA ≤ 85°C, GND = 0 V, unless otherwise noted. Typical values noted reflect the approximate parameter means at TA = 25°C under nominal conditions, unless otherwise noted. Characteristic Symbol Min Typ Max Unit |
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