SM-8 DUAL NPN MEDIUM POWER

HIGH GAIN TRANSISTORS

ISSUE 1 - NOVEMBER 1995

PARTMARKING DETAIL – T1053

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

150

V

Collector-Emitter Voltage

75

V

Emitter-Base Voltage

5V

Peak Pulse Current

20

A

Continuous Collector Current

5A

Base Current

500

mA

Operating and Storage Temperature Range

-55 to +150

°C

THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

VALUE

UNIT

Any single die “on”

Both die “on” equally

2.25

2.75

W

W

Derate above 25°C*

Any single die “on”

Both die “on” equally

18

22

mW/ °C

mW/ °C

Thermal Resistance - Junction to Ambient*

Any single die “on”

Both die “on” equally

55.6

45.5

°C/ W

°C/ W

* The power which can be dissipated assuming the device is mounted in a typical manner

on a PCB with copper equal to 2 inches square.

ZDT1053

SM-8

(8 LEAD SOT223)

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%

PARAMETER

SYMBOL MIN.

TYP.

MAX.

UNIT

CONDITIONS.

Collector-Base

Breakdown Voltage

245

V

Collector-Emitter

Breakdown Voltage

150

245

V

Collector-Emitter

Breakdown Voltage

75

100

V

Collector-Emitter

Breakdown Voltage

150

245

V

Emitter-Base

Breakdown Voltage

V

Collector Cutoff Current

0.3

10

nA

Emitter Cutoff Current

0.3

10

nA

Collector Emitter Cutoff

Current

0.3

10

nA

Collector-Emitter Saturation

Voltage

17

70

120

150

300

25

100

150

200

440

mV

mV

mV

mV

mV

Base-Emitter

Saturation Voltage

1100

1200

mV

Base-Emitter Turn-On

Voltage

1000

1100

mV

Static Forward Current

Transfer Ratio

260

300

150

30

420

450

220

50

15

1200

Transition Frequency

140

MHz

f=100MHz

Output Capacitance

21

30

pF

Switching Times

90

ns

750

ns

ZDT1053

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3 - 364