Electronic Components Datasheet Search |
|
ZDT1053 Datasheet(PDF) 2 Page - Diodes Incorporated |
|
ZDT1053 Datasheet(HTML) 2 Page - Diodes Incorporated |
2 / 3 page SM-8 DUAL NPN MEDIUM POWER HIGH GAIN TRANSISTORS ISSUE 1 - NOVEMBER 1995 PARTMARKING DETAIL T1053 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 150 V Collector-Emitter Voltage VCEO 75 V Emitter-Base Voltage VEBO 5V Peak Pulse Current ICM 20 A Continuous Collector Current IC 5A Base Current IB 500 mA Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C THERMAL CHARACTERISTICS PARAMETER SYMBOL VALUE UNIT Total Power Dissipation at Tamb = 25°C* Any single die on Both die on equally Ptot 2.25 2.75 W W Derate above 25°C* Any single die on Both die on equally 18 22 mW/ °C mW/ °C Thermal Resistance - Junction to Ambient* Any single die on Both die on equally 55.6 45.5 °C/ W °C/ W * The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square. ZDT1053 SM-8 (8 LEAD SOT223) C1 C1 C2 C2 B1 E1 B2 E2 *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO 150 245 V IC=100µA Collector-Emitter Breakdown Voltage VCES 150 245 V IC=100µA Collector-Emitter Breakdown Voltage VCEO 75 100 V IC=10mA Collector-Emitter Breakdown Voltage VCEV 150 245 V IC=100µA, VEB=1V Emitter-Base Breakdown Voltage V(BR)EBO 58.8 V IE=100µA Collector Cutoff Current ICBO 0.3 10 nA VCB=120V Emitter Cutoff Current IEBO 0.3 10 nA VEB=4V Collector Emitter Cutoff Current ICES 0.3 10 nA VCES=120V Collector-Emitter Saturation Voltage VCE(sat) 17 70 120 150 300 25 100 150 200 440 mV mV mV mV mV IC=0.2A, IB=20mA* IC=1A, IB=50mA* IC=1A, IB=10mA* IC=2A, IB=50mA* IC=5A, IB=250mA* Base-Emitter Saturation Voltage VBE(sat) 1100 1200 mV IC=5A, IB=250mA* Base-Emitter Turn-On Voltage VBE(on) 1000 1100 mV IC=5A, VCE=2V* Static Forward Current Transfer Ratio hFE 260 300 150 30 420 450 220 50 15 1200 IC=10mA, VCE=2V* IC=1A, VCE=2V* IC=2A, VCE=2V* IC=5A, VCE=2V* IC=10A, VCE=2V* Transition Frequency fT 140 MHz IC=50mA, VCE=10V f=100MHz Output Capacitance Cobo 21 30 pF VCB=10V, f=1MHz Switching Times ton 90 ns IC=2A, IB=20mA, VCC=50V toff 750 ns IC=2A, IB=±20mA, VCC=50V ZDT1053 3 - 363 3 - 364 |
Similar Part No. - ZDT1053 |
|
Similar Description - ZDT1053 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |