CMLM8205

SURFACE MOUNT

P-CHANNEL MOSFET AND

LOW VF SILICON SCHOTTKY DIODE

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMLM8205 is a

Multi Discrete Module™ consisting of a single

P-Channel Enhancement-mode MOSFET and a

Low VF Schottky diode packaged in a space saving

PICOmini™ SOT-563 surface mount case. This

device is designed for small signal general purpose

applications where size and operational efficiency are

prime requirements.

MARKING CODE: C85

MAXIMUM RATINGS - CASE: (TA=25°C)

SYMBOL

UNITS

Power Dissipation (Note 1)

PD

350

mW

Power Dissipation (Note 2)

PD

300

mW

Power Dissipation (Note 3)

PD

150

mW

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +150

°C

Thermal Resistance

ΘJA

357

°C/W

MAXIMUM RATINGS - Q1: (TA=25°C)

SYMBOL

UNITS

Drain-Source Voltage

VDS

50

V

Drain-Gate Voltage

VDG

50

V

Gate-Source Voltage

VGS

20

V

Continuous Drain Current

ID

280

mA

Continuous Source Current (Body Diode)

IS

280

mA

Maximum Pulsed Drain Current

IDM

1.5

A

Maximum Pulsed Source Current

ISM

1.5

A

MAXIMUM RATINGS - D1: (TA=25°C)

SYMBOL

UNITS

Peak Repetitive Reverse Voltage

VRRM

40

V

Continuous Forward Current

IF

500

mA

Peak Repetitive Forward Current, tp

≤1.0ms

IFRM

3.5

A

Peak Forward Surge Current, tp = 8.0ms

IFSM

10

A

ELECTRICAL CHARACTERISTICS - Q1: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

IGSSF, IGSSR

VGS=20V, VDS=0

100

nA

IDSS

VDS=50V, VGS=0

1.0

μA

IDSS

VDS=50V, VGS=0, TJ=125°C

500

μA

ID(ON)

VGS=10V, VDS=10V

50

mA

BVDSS

VGS=0, ID=10μA

50

V

VGS(th)

VDS=VGS, ID=250μA

1.0

2.5

V

APPLICATIONS:

• DC / DC Converters

• Battery Powered Portable Equipment

FEATURES:

• Low rDS(on) Transistor (3.0Ω MAX @ VGS=5.0V)

• Low VF Shottky Diode (0.47V MAX @ 0.5A)

SOT-563 CASE

R1 (20-January 2010)

www.centr a lsemi.com