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FZT7053 Datasheet(PDF) 2 Page - Diodes Incorporated |
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FZT7053 Datasheet(HTML) 2 Page - Diodes Incorporated |
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2 / 5 page  FZT7053 Document Number DS31895 Rev. 2 - 2 2 of 5 www.diodes.com August 2009 © Diodes Incorporated A Product Line of Diodes Incorporated FZT7053 10 0V NP N Darli ng t on tr a nsi s t o r in SO T 2 2 3 Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage VCEO 100 V Emitter-Base Voltage VEBO 12 V Continuous Collector Current IC 1.5 A Peak Pulse Current ICM 1.8 A Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation at TA = 25°C (Note 1) Linear derating factor PD 1.0 8.0 W mW / °C Power Dissipation at TA = 25°C (Note 2) Linear derating factor PD 1.25 10 W mW / °C Power Dissipation at TA = 25°C (Note 3) Linear derating factor PD 6.25 50 W mW / °C Thermal Resistance, Junction to Ambient (Note 1) RθJA 125 °C/W Thermal Resistance, Junction to Ambient (Note 2) RθJA 100 °C/W Thermal Resistance, Junction to Lead (Note 3) RθJL 20 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Notes: 1. For a device surface mounted on 15mm X 15mm X 1.6mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions 2. Mounted on 25mm X 25mm X 1.6mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions. 3. Junction to lead (collector Tab). Typical. Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO 100 V IC = 100µA Collector-Emitter Breakdown Voltage (Note 4) V(BR)CEO 100 V IC = 100mA Emitter-Base Breakdown Voltage V(BR)EBO 12 V IE = 100µA Collector-Base Cutoff Current ICBO <1 100 0.5 nA µA VCB = 80V VCB = 80V, Tamb = 100°C Collector-Emitter Cutoff Current ICES <1 200 0.5 nA µA VCB = 80V VCB = 80V, Tamb = 100°C Emitter Cutoff Current IEBO <1 100 nA VEB = 7V DC Current Gain (Note 4) hFE 10000 1000 IC = 100mA, VCE = 5V IC = 1A, VCE = 5V Collector-Emitter Saturation Voltage (Note 4) VCE(SAT) 1.5 V IC = 100mA, IB = 0.1mA Base-Emitter Turn-On Voltage (Note 4) VBE(ON) 2.0 mV IC = 100mA, VCE = 5V Output Capacitance (Note 4) Cobo 6.0 8.0 pF VCB = 10V. f = 1MHz Current Gain-Bandwidth Product (Note 4) fT 200 MHz VCE = 5V, IC = 100mA Turn-On Time ton 0.7 µs VCC = 10V, IC = 100µA IB1 = -IB2 = 0.1mA Turn-Off Time toff 2.5 µs Notes: 1. For a device surface mounted on 15mm X 15mm X 1.6mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions 2. Mounted on 25mm X 25mm X 1.6mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions. 3. Junction to lead (collector Tab). Typical. 4. Measured under pulsed conditions. Pulse width = 300 µs. Duty cycle ≤ 2% |
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