PAGE . 1

STAD-JAN.08.2010

PJP830 / PJF830

FEATURES

• 4.5A , 500V, R

Ω

@V

• Low ON Resistance

• Fast Switching

• Low Gate Charge

• Fully Characterized Avalanche Voltage and Current

• Specially Desigened for AC Adapter, Battery Charge and SMPS

• In compliance with EU RoHs 2002/95/EC Directives

MECHANICAL DATA

• Case: TO-220AB / ITO-220AB Molded Plastic

• Terminals : Solderable per MIL-STD-750,Method 2026

ORDERING INFORMATION

500V N-Channel Enhancement Mode MOSFET

Maximum RATINGS and Thermal Characteristics (T

PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE

INTERNAL SCHEMATICDIAGRAM

Drain

Gate

Source

1

2

3

TO-220AB/ITO-220AB

1

2

3

G

D

S

TO-220AB

ITO-220AB

1

2

3

G

D

S

TYPE

MARKING

PACKAGE

PACKING

PJP830

P830

TO-220AB

50PCS/TUBE

PJF830

F830

ITO-220AB

50PCS/TUBE

PA RA ME TE R

S ymb o l

P J P 8 3 0

P J F 8 3 0

Uni ts

D r a i n- S o ur c e Vo lta g e

V

D S

5 0 0

V

Ga te - S o ur c e Vo lta g e

V

GS

+3 0

V

C o nti nuo us D ra i n C ur re nt

I

D

4 .5

4 .5

A

I

D M

1 8

1 8

A

Ma xi mum P o we r D i s s i p a ti o n

D e ra ti ng F a c to r

T

P

D

8 7

0 .7

4 4

0 .3 5

W

Op e ra ti ng J unc t i o n a nd S to ra g e Te mp e r a ture Ra ng e

T

-5 5 to +1 5 0

Avalanche Energy with Single Pulse

I

E

A S

3 1 0

mJ

Junction-to-Case Thermal Resistance

R

θ

J C

1 .4 3

2 .8 2

Junction-to Ambient Thermal Resistance

R

θ

J A

6 2 .5

1 0 0