PJ4812_09 datasheet(1/5 Pages) PANJIT

Part #	PJ4812

Description	30V N-Channel Enhancement Mode MOSFET

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Manufacturer	PANJIT [Pan Jit International Inc.]

Direct Link	http://www.panjit.com.tw

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PAGE . 1

December 01.2009-REV.00

PJ4812

FEATURES

• R

DS(ON), VGS@10V,IDS@8A=17mΩ

• R

DS(ON), VGS@5.0V,IDS@6A=34mΩ

• Advanced Trench Process Technology

• High Density Cell Design For Ultra Low On-Resistance

• Specially Designed for DC/DC Converters

• Fully Characterized Avalanche Voltage and Current

• Pb free product : 99% Sn above can meet RoHS environment

substance directive request

MECHANICALDATA

• Case: SOIC-08 Package

• Terminals : Solderable per MIL-STD-750D,Method 1036.3

• Marking : 4812

30V N-Channel Enhancement Mode MOSFET

Note : 1. Maximum DC current limited by the package

2. Surface mounted on FR4 board, t < 10 sec

PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE

ABSOLUTE MAXIMUM RATINGS (TC=25oC unless otherwise noted )

PARAMETER

SYMBOL

VALUE

UNIT

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

+20

V

Continous Drain Current

TC=25oC

I D

8

A

Pulsed Drain Current (1)

I DM

32

A

Avalanche Energy

L=0.1mH,I D=8A,VDD=25V

EAS

3.2

mJ

Power Dissipation

TC=25oC

PD

2.4

W

TC=75oC

1.2

Operating Junction and Stroage Temperature Range

TJ,TSTG

-55 to +175

oC

Junction-to-Ambient Thermal Resistance (PCB Mounted)2

RΘJA

62.5

oC/W

PIN Assignment

1.Source1

2.Gate1

3.Source2

4.Gate2

5.Drain2

6.Drain2

7.Drain1

8.Drain1

SOIC-08

1

2

3

4

8

7

6

5

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