SOT223 NPN SILICON PLANAR

HIGH VOLTAGE TRANSISTOR

ISSUE 4 - OCTOBER 1995

FEATURES

* Low saturation voltage

COMPLEMENTARY TYPE -

FZT758

PARTMARKING DETAIL -

FZT658

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

400

V

Collector-Emitter Voltage

400

V

Emitter-Base Voltage

5V

Peak Pulse Current

1A

Continuous Collector Current

0.5

A

2W

Operating and Storage Temperature Range

-55 to +150

°C

PARAMETER

SYMBOL MIN.

MAX.

UNIT

CONDITIONS.

Breakdown Voltage

400

V

400

V

5V

Collector Cut-Off Current

100

nA

Emitter Cut-Off Current

100

nA

Collector-Emitter

Saturation Voltage

0.3

0.25

0.5

V

V

V

Base-Emitter

Saturation Voltage

0.9

V

Base-Emitter

Turn-On Voltage

1.0

V

Static Forward Current

Transfer Ratio

50

50

40

Transition Frequency

50

MHz

f=20MHz

Output Capacitance

10

pF

Switching Times

130

ns

3300

ns

*Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2%

Spice parameter data is available upon request for this device

FZT658

FZT658

C

C

E

B

C

C

E

B

3 - 216

3 - 215

0.01

0.1

20

110

1.0

0.8

0.6

0.4

0

0.2

1.6

1.4

1.2

0.01

0.1

20

110

1.0

0.8

0.6

0.4

0

0.2

1.6

1.4

1.2

0.01

0.1

20

1

10

1.0

0.8

0.6

0.4

0

0.2

1.6

1.4

1.2

TYPICAL CHARACTERISTICS

Collector Current (Amps)

Collector Current (Amps)

-55°C

+25°C

+100°C

+175°C

+100°C

+25°C

-55°C

Collector Current (Amps)

Collector Current (Amps)

Collector Current (Amps)

300

200

100

0.001

0.001

0.01

0.1

20

110

1.0

0.8

0.6

0.4

0

0.2

1.6

1.4

1.2

-55°C

+25°C

+100°C

+175°C

0.001

0.001

0.01

0.1

20

110

1.0

0.8

0.6

0.4

0

0.2

1.6

1.4

1.2

0.001

-55°C

+25°C

+100°C

+175°C

1

0.1

Safe Operating Area

10

100

1s

DC

100ms

10ms

1ms

1

0.01

1000

0.001