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LB1966M Datasheet(PDF) 1 Page - Sanyo Semicon Device |
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LB1966M Datasheet(HTML) 1 Page - Sanyo Semicon Device |
1 / 4 page LB1966M No. 6215-1/4 Specification Absolute Maximum Ratings at Ta = 25 °C Parameter Symbol Conditions Ratings Unit Maximum supply voltage VCC max 18 V Allowable power dissipation Pd max With specified substrate * 800 mW Output current IOUTave 500 mA IOUTpeak t ≤ 1 ms 1200 mA Output withstand voltage VOUT max Internal V RD output current IRD max 10 mA RD output withstand voltage VRDOUT max 18 V Operating temperature Topr –30 to +85 °C Storage temperature Tstg –55 to +150 °C * With substrate (114.3 × 76.1 × 1.5 mm3, glass epoxy) Monolithic Digital IC LB1966M Fan Motor 2-Phase Half-Wave Driver Package Dimensions unit: mm 3086A-MFP10S Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. 63099RM(KI) Ordering number : EN6215 [LB1966M] SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Features • Dual power supply voltage design (5/12V) and wide voltage handling range • Built-in Hall amplifier with hysteresis (supports core without commutating pole) • Built-in lockup protection and automatic recovery circuits (External capacitor for rotation detection need only be 0.1 µF, allowing compact, cost-saving design) • Built-in latch-type RD (restraint protection) output (Vosat = 0.2Vtyp at Io = 5 mA) • Built-in output transistor with output withstand voltage 24Vmin/output current 500 mA (average), 1.2A (peak) • Built-in thermal protection circuit • Compact, high-temperature resistant MFP-10 package reduces external parts count and mounting space, therefore making this IC support the motors with a wide range of sizes and speeds. 1 10 5 6 0.55 1.0 0.35 5.1 0.15 SANYO : MFP10S |
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