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FMMT459 Datasheet(PDF) 4 Page - Diodes Incorporated |
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FMMT459 Datasheet(HTML) 4 Page - Diodes Incorporated |
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4 / 6 page  FMMT459 Issue 5 - August 2005 4 www.zetex.com © Zetex Semiconductors plc 2005 Electrical characteristics (at Tamb = 25°C unless otherwise stated) Note: For high voltage applications, the appropriate industry sector guidelines should be considered with regards to voltage spacing between Terminals. Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 500 700 V IC = 100 A Collector-emitter breakdown voltage BVCEV 500 700 V IC = 10 A, 0.3V > VBE > -1V Collector-emitter breakdown voltage BVCEO 450 500 V IC = 10mA * Emitter-base breakdown voltage BVEBO 68.1 V IE = 100 A Emitter-base breakdown voltage (reverse blocking) BVECV 68.1 V IC = 1 A, 0.3V > VBC > -6V Collector-emitter cut-off current ICES 100 nA VCE=450V Collector-base cut-off current ICBO 100 nA VCB=450V Emitter-base cut-off current IEBO 100 nA VEB=5V Static forward current transfer ratio HFE 50 120 70 IC = 30mA, VCE = 10V IC = 50mA *, V CE = 10V Collector-emitter saturation voltage VCE(sat) 60 70 75 90 mV mV IC = 20mA, IB = 2mA * IC = 50mA, IB = 6mA * NOTES: * Measured under pulsed conditions. Pulse width = 300 s; duty cycle <2% Base-emitter saturation voltage VBE(sat) 0.76 0.9 V IC = 50mA, IB = 5mA * Base-emitter turn-on voltage VBE(on) 0.71 0.9 V IC = 50mA, VCE = 10V * Transition frequency fT 50 MHz IC = 10mA, VCE = 20V f = 20MHZ Output capacitance Cobo 5 PFVCB = 20V, f = 1MHZ Turn-on time t(ON) 113 ns IC = 50mA, VC = 100V IB1 = 5mA, IB2 = 10mA Turn-off time t(OFF) 3450 ns IC = 50mA, VC = 100V IB1 = 5mA, IB2 = 10mA |
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