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 DIODES
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FCX1053A © Zetex Semiconductors plc 2006 Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage V(BR)CBO 150 250 V IC = 100 A Collector-emitter breakdown voltage VCES 150 250 V IC = 100 A Collector-emitter breakdown voltage VCEO 75 100 V IC = 10mA Collector-emitter breakdown voltage VCEV 150 250 V IC = 100 A, VEB = 1V Emitter-base breakdown voltage V(BR)EBO 58.8 V IE = 100 A Collector cut-off current ICBO 0.9 10 nA VCB = 120V Emitter cut-off current IEBO 0.3 10 nA VEB = 4V Collector-emitter cut-off current ICES 1.5 10 nA VCES = 120V Collector-emitter saturation voltage VCE(sat) 21 30 mV IC = 0.2A, IB = 20mA (*) NOTES: (*) Measured under pulsed conditions. Pulse width = 300 s. Duty 2%. 55 75 mV 150 200 mV IC = 1A, IB = 10mA 160 210 mV 350 440 mV IC = 4.5A, IB = 200mA Base-emitter saturation voltage VBE(sat) 900 1000 mV Base-emitter turn-on voltage VBE(on) 825 950 mV IC = 3A, VCE = 2V Static forward current transfer ratio hFE 270 440 300 450 1200 300 450 IC = 1A, VCE = 2V 40 60 20 Switching times ton 162 ns IC = 2A, IB1 = IB2 = 20mA, VCC = 50V toff 900 ns IC = 2A, IB1 = IB2 = 20mA, VCC = 50V Transition frequency fT 140 MHz IC = 50mA, VCE = 10V, f = 100MHz Output capacitance COBO 21 30 pF VCB = 10V, f = 1MHz |
