FCX658A datasheet(3/4 Pages) DIODES

Part #	FCX658A

Description	SOT89 NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR

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Manufacturer	DIODES [Diodes Incorporated]

Direct Link	http://www.diodes.com

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3 / 4 page

0.01

0.1

20

110

1.0

0.8

0.6

0.4

0

0.2

1.6

1.4

1.2

0.01

0.1

20

110

1.0

0.8

0.6

0.4

0

0.2

1.6

1.4

1.2

0.01

0.1

20

1

10

1.0

0.8

0.6

0.4

0

0.2

1.6

1.4

1.2

TYPICAL CHARACTERISTICS

VCE(sat) v IC

IC - Collector Current (Amps)

Tamb=25°C

VCE(sat) v IC

IC - Collector Current (Amps)

-55°C

+25°C

+100°C

+25°C

-55°C

IC - Collector Current (Amps)

hFE v IC

VBE(sat) v IC

IC - Collector Current (Amps)

VBE(on) v IC

IC/IB=50

IC/IB=10

VCE=10V

300

200

100

VCE - Collector Voltage (Volts)

Safe Operating Area

100

110

0.001

0.01

0.1

1.0

Single Pulse Test at Tamb=25°C

D.C.

1s

100ms

10ms

1.0ms

0.1ms

0.001

0.01

0.1

20

110

1.0

0.8

0.6

0.4

0

0.2

1.6

1.4

1.2

-55°C

+25°C

+100°C

IC/IB=10

0.001

IC/IB=20

0.01

0.1

20

110

1.0

0.8

0.6

0.4

0

0.2

1.6

1.4

1.2

0.001

1000

-55°C

+25°C

+100°C

IC/IB=10

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