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DMG1013UW Datasheet(PDF) 1 Page - Diodes Incorporated |
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DMG1013UW Datasheet(HTML) 1 Page - Diodes Incorporated |
1 / 6 page DMG1013UW Document number: DS31861 Rev. 3 - 2 1 of 6 www.diodes.com October 2009 © Diodes Incorporated DMG1013UW P-CHANNEL ENHANCEMENT MODE MOSFET Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead Free By Design/RoHS Compliant (Note 1) • ESD Protected Up To 3KV • "Green" Device (Note 2) • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data • Case: SOT-323 • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminal Connections: See Diagram Below • Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 • Marking Information: See Page 2 • Ordering Information: See Page 2 • Weight: 0.006 grams (approximate) Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS ±6 V Continuous Drain Current (Note 3) Steady State TA = 25°C TA = 85°C ID -0.82 -0.54 A Pulsed Drain Current (Note 4) IDM -6 A Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 3) PD 0.31 W Thermal Resistance, Junction to Ambient @TA = 25°C (Note 3) RθJA 398 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Notes: 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB, with minimum recommended pad layout. 4. Repetitive rating, pulse width limited by junction temperature. ESD PROTECTED Equivalent Circuit Top View Top View Source Gate Protection Diode Gate Drain GS D Please click here to visit our online spice models database. |
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