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DMP3100L-7 Datasheet(PDF) 1 Page - Diodes Incorporated |
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DMP3100L-7 Datasheet(HTML) 1 Page - Diodes Incorporated |
1 / 4 page DMP3100L Document number: DS31441 Rev. 3 - 2 1 of 4 www.diodes.com June 2010 © Diodes Incorporated DMP3100L P-CHANNEL ENHANCEMENT MODE MOSFET Features • Low On-Resistance: 100m Ω @ VGS = -10V, ID = -2.7A 170m Ω @ VGS = -4.5V, ID = -2.0A • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead Free By Design/RoHS Compliant (Note 2) • "Green" Device (Note 4) • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data • Case: SOT-23 • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 • Terminal Connections: See Diagram • Marking Information: See Page 3 • Ordering Information: See Page 3 • Weight: 0.008 grams (approximate) Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Units Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS ±20 V Drain Current (Note 1) VGS = -10V Steady State TA = 25°C TA = 70°C ID -2.7 -2 A Pulsed Drain Current (Note 3) IDM -8 A Thermal Characteristics Characteristic Symbol Value Units Total Power Dissipation (Note 1) PD 1.08 W Thermal Resistance, Junction to Ambient @TA = 25°C (Note 1) RθJA 115 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage BVDSS -30 ⎯ ⎯ V VGS = 0V, ID = -250μA Zero Gate Voltage Drain Current IDSS ⎯ ⎯ -800 nA VDS = -30V, VGS = 0V Gate-Source Leakage IGSS ⎯ ⎯ ±80 ±800 nA VGS = ±12V, VDS = 0V VGS = ±15V, VDS = 0V ON CHARACTERISTICS (Note 5) Gate Threshold Voltage VGS(th) -1.3 -1.8 -2.1 V VDS = VGS, ID = -250μA Static Drain-Source On-Resistance RDS (ON) ⎯ 86 147 100 170 m Ω VGS = -10V, ID = -2.7A VGS = -4.5V, ID = -2.0A Forward Transfer Admittance |Yfs| ⎯ 3.6 ⎯ S VDS = -5V, ID = -2.7A Diode Forward Voltage (Note 5) VSD ⎯ ⎯ -1.26 V VGS = 0V, IS = -2.7A DYNAMIC CHARACTERISTICS Input Capacitance Ciss ⎯ 227 ⎯ pF VDS = -10V, VGS = 0V f = 1.0MHz Output Capacitance Coss ⎯ 64 ⎯ pF Reverse Transfer Capacitance Crss ⎯ 36 ⎯ pF Notes: 1. Device mounted on FR-4 PCB. t ≤5 sec. 2. No purposefully added lead. 3. Pulse width ≤10μS, Duty Cycle ≤1%. 4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 5. Short duration pulse test used to minimize self-heating effect. SOT-23 TOP VIEW Source EQUIVALENT CIRCUIT Gate Drain D G S TOP VIEW |
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