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DZT658-13 Datasheet(PDF) 1 Page - Diodes Incorporated |
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DZT658-13 Datasheet(HTML) 1 Page - Diodes Incorporated |
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1 / 3 page  DZT658 NPN SURFACE MOUNT TRANSISTOR Features • Epitaxial Planar Die Construction • Ideally Suited for Automated Assembly Processes • Ideal for Medium Power Switching or Amplification Applications • Lead Free By Design/RoHS Compliant (Note 1) • "Green" Device (Note 2) Mechanical Data • Case: SOT-223 • Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020C • Terminals: Finish — Matte Tin annealed over Copper Leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 • Marking Information: See Page 3 • Ordering Information: See Page 3 • Weight: 0.115 grams 2 3 4 1 SOT-223 2,4 3 1 COLLECTOR EMITTER BASE 4 3 2 1 C C B E TOP VIEW Schematic and Pin Configuration Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Collector-Base Voltage VCBO 400 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 5 V Continuous Collector Current IC 0.5 A Peak Pulse Current ICM 1 A Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation @TA = 25°C (Note 3) PD 1 W Thermal Resistance, Junction to Ambient Air (Note 3) @TA = 25°C RθJA 125 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition Off Characteristics Collector-Base Breakdown Voltage V(BR)CBO 400 ⎯ ⎯ V IC = 100μA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO 400 ⎯ ⎯ V IC = 10mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO 5 ⎯ ⎯ V IE = 100μA, IC = 0 Collector Cutoff Current ICBO ⎯ ⎯ 100 nA VCB = 320V, IE = 0 Emitter Cutoff Current IEBO ⎯ ⎯ 100 nA VEB = 4V, IC = 0 On Characteristics (Note 4) Collector-Emitter Saturation Voltage VCE(SAT) ⎯ ⎯ ⎯ 0.075 0.06 0.08 0.3 0.25 0.5 V V V IC = 20mA, IB = 1mA IC = 50mA, IB = 5mA IC = 100mA, IB = 10mA Base-Emitter Saturation Voltage VBE(SAT) ⎯ ⎯ 0.9 V IC = 100mA, IB = 10mA Base-Emitter Turn-On Voltage VBE(ON) ⎯ ⎯ 1 V VCE = 5V, IC = 100mA DC Current Gain hFE 50 50 40 110 100 85 ⎯ ⎯ ⎯ ⎯ VCE = 5V, IC = 1mA VCE = 5V, IC = 100mA VCE = 10V, IC = 200mA AC Characteristics Transition Frequency fT 50 ⎯ ⎯ MHz VCE = 20V, IC = 30mA, f = 30MHz Output Capacitance Cobo ⎯ ⎯ 10 pF VCB = 20V, f = 1MHz Switching Times ton toff ⎯ ⎯ 138 175 ⎯ ⎯ ns ns VCC = 100V, IC = 100mA IB1 = 10mA, IB2 = -20mA Notes: 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. DS31308 Rev. 2 - 2 1 of 3 www.diodes.com DZT658 © Diodes Incorporated 3. Device mounted on FR-4 PCB, pad layout as shown on page 3 or in Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 4. Pulse Test: Pulse width ≤300μs. Duty cycle ≤2.0%. Please click here to visit our online spice models database. |
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