Electronic Components Datasheet Search |
|
2DB1119S Datasheet(PDF) 1 Page - Diodes Incorporated |
|
2DB1119S Datasheet(HTML) 1 Page - Diodes Incorporated |
1 / 4 page 2DB1119S PNP SURFACE MOUNT TRANSISTOR Features • Epitaxial Planar Die Construction • Ideally Suited for Automated Assembly Processes • Ideal for Medium Power Switching or Amplification Applications • Lead Free By Design/RoHS Compliant (Note 1) • "Green" Device (Note 2) Mechanical Data • Case: SOT89-3L • Case Material: Molded Plastic, "Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020C • Terminals: Finish — Matte Tin annealed over Copper leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 • Marking Information: See Page 3 • Ordering Information: See Page 3 • Weight: 0.072 grams (approximate) SOT89-3L 3 1 2,4 COLLECTOR EMITTER BASE 4 3 2 1 C C B E TOP VIEW Schematic and Pin Configuration Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Collector-Base Voltage VCBO -25 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -2 A Continuous Collector Current IC -1 A Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 3) @ TA = 25°C PD 1 W Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C RθJA 125 °C/W Operating and Storage Temperature Range Tj, TSTG -55 to +150 °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Conditions OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage V(BR)CBO -25 ⎯ ⎯ V IC = -10μA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO -25 ⎯ ⎯ V IC = -1mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO -5 ⎯ ⎯ V IE = -10μA, IC = 0 Collector Cut-Off Current ICBO ⎯ ⎯ -0.1 μA VCB = -20V, IE = 0 Emitter Cut-Off Current IEBO ⎯ ⎯ -0.1 μA VEB = -4V, IC = 0 ON CHARACTERISTICS (Note 4) Collector-Emitter Saturation Voltage VCE(SAT) ⎯ -0.15 -0.7 V IC = -500mA, IB = -50mA Base-Emitter Saturation Voltage VBE(SAT) ⎯ -0.85 -1.2 V IC = -500mA, IB = -50mA 140 ⎯ 280 ⎯ VCE = -2V, IC = -50mA DC Current Gain hFE 40 ⎯ ⎯ ⎯ VCE = -2V, IC = -1A SMALL SIGNAL CHARACTERISTICS Transition Frequency fT ⎯ 200 ⎯ MHz VCE = -10V, IC = -50mA f = 100MHz Output Capacitance Cob ⎯ 12 ⎯ pF VCB = -10V, IE = 0, f = 1MHz Notes: 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 4. Measured under pulsed conditions. Pulse width = 300 μs. Duty cycle ≤2%. DS31298 Rev. 2 - 2 1 of 4 www.diodes.com 2DB1119S © Diodes Incorporated Please click here to visit our online spice models database. |
Similar Part No. - 2DB1119S |
|
Similar Description - 2DB1119S |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |