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DMN3010LSS Datasheet(PDF) 2 Page - Diodes Incorporated |
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DMN3010LSS Datasheet(HTML) 2 Page - Diodes Incorporated |
2 / 5 page DMN3010LSS Document number: DS31259 Rev. 6 - 2 2 of 5 www.diodes.com November 2008 © Diodes Incorporated DMN3010LSS Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage BVDSS 30 ⎯ ⎯ V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 1 μA VDS = 30V, VGS = 0V Gate-Source Leakage IGSS ⎯ ⎯ ±100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 5) Gate Threshold Voltage VGS(th) 1.1 ⎯ 2.0 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS (ON) ⎯ ⎯ ⎯ 9 13 m Ω VGS = 10V, ID = 16A VGS = 4.5V, ID = 10A Forward Transconductance gfs ⎯ 16 ⎯ S VDS = 10V, ID = 12A Diode Forward Voltage (Note 5) VSD 0.5 ⎯ 1.2 V VGS = 0V, IS = 16A DYNAMIC CHARACTERISTICS Input Capacitance Ciss ⎯ 2096 ⎯ pF VDS = 15V, VGS = 0V f = 1.0MHz Output Capacitance Coss ⎯ 329 ⎯ pF Reverse Transfer Capacitance Crss ⎯ 258 ⎯ pF Gate Resistance RG ⎯ 1.2 ⎯ Ω VGS = 0V, f = 1MHz SWITCHING CHARACTERISTICS Total Gate Charge Qg ⎯ 22.4 43.7 ⎯ nC VDS = 15V, VGS = 4.5V, ID = 16A VDS = 15V, VGS = 10.0V, ID = 16A Gate-Source Charge Qgs ⎯ 5.5 ⎯ VDS = 15V, VGS = 10V, ID = 16A Gate-Drain Charge Qgd ⎯ 12.6 ⎯ VDS = 15V, VGS = 10V, ID = 16A Turn-On Delay Time td(on) ⎯ 7.11 ⎯ ns VGS = 10V, VDS = 15V, RD = 15Ω, RG = 6Ω Rise Time tr ⎯ 10.3 ⎯ Turn-Off Delay Time td(off) ⎯ 58.3 ⎯ Fall Time tf ⎯ 32.1 ⎯ Notes: 5. Short duration pulse test used to minimize self-heating effect. Fig. 1 Typical Output Characteristics V , DRAIN-SOURCE VOLTAGE (V) DS 0 2 4 6 8 10 12 14 16 18 20 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 V = 2.5V GS V = 4.5V GS V = 10V GS V = 1.5V GS V = 3.0V GS 0 2 4 6 8 10 12 14 16 18 20 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 V , SOURCE-DRAIN VOLTAGE (V) SD Fig. 2 Source Current vs. Source-Drain Voltage T = -55°C A T = 25°C A T = 85°C A T = 125°C A T = 150°C A |
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