DMN2230U datasheet(2/4 Pages) DIODES

Part #	DMN2230U

Description	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Download	4 Pages

Scroll/Zoom	100%

Manufacturer	DIODES [Diodes Incorporated]

Direct Link	http://www.diodes.com

Logo

2 / 4 page

DMN2230U

Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage

BVDSS

20

⎯

V

VGS = 0V, ID = 10μA

Zero Gate Voltage Drain Current

IDSS

⎯

1

μA

VDS = 20V, VGS = 0V

Gate-Source Leakage

IGSS

⎯

±10

μA

VGS = ±12V, VDS = 0V

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage

VGS(th)

0.5

⎯

1.0

V

VDS = VCS, ID = 250μA

VGS = 4.5V, ID = 2.5A

VGS = 2.5V, ID = 1.5A

RDS (ON)

⎯

81

113

170

110

145

230

m

Ω

Static Drain-Source On-Resistance

VGS = 1.8V, ID = 1.0A

Forward Transfer Admittance

|Yfs|

⎯

5

⎯

S

VDS =5V, ID = 2.4A

Diode Forward Voltage (Note 6)

VSD

⎯

0.8

1.1

V

VGS = 0V, IS = 1.05A

DYNAMIC CHARACTERISTICS

Input Capacitance

Ciss

⎯

188

⎯

pF

DMN2230U

Document number: DS31180 Rev. 4 - 2

2 of 4

www.diodes.com

June 2008

Output Capacitance

Coss

⎯

44

⎯

pF

Crss

⎯

30

⎯

pF

VDS = 10V, VGS = 0V

f = 1.0MHz

Reverse Transfer Capacitance

Turn-On Delay Time

td(on)

⎯

8

⎯

Rise Time

tr

⎯

3.8

⎯

Turn-Off Delay Time

td(off)

⎯

19.6

⎯

tf

⎯

8.3

⎯

ns

VDD = 10V, RL = 10Ω

ID = 1A, VGEN = 4.5V, RG = 6Ω

Fall Time

Notes:

6. Short duration pulse test used to minimize self-heating effect.

0

2

4

6

8

10

0

1

2

3

4

5

6

7

8

0

0.5

1

1.5

2

2.5

3

3.5

4

Similar Part No. - DMN2230U

Manufacturer	Part #	Datasheet	Description
ZP Semiconductor	DMN2230U	138Kb / 2P	N-CHANNEL ENHANCEMENT MODE MOSFET
Diodes Incorporated	DMN2230UQ	375Kb / 5P	N-CHANNEL ENHANCEMENT MODE MOSFET
Diodes Incorporated	DMN2230U	128Kb / 5P	N-CHANNEL ENHANCEMENT MODE MOSFET

More results

Similar Description - DMN2230U

Manufacturer	Part #	Datasheet	Description
Diodes Incorporated	BS870	63Kb / 2P	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DS11302 Rev. G-2
	BSS123W	67Kb / 3P	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DS30368 Rev. 2 - 2
	DT453N	73Kb / 4P	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DS11608 Rev. C-4
NXP Semiconductors	BSH121	297Kb / 13P	N-channel enhancement mode field-effect transistor Rev. 01-14 August 2000
NXP Semiconductors	PH8230	214Kb / 12P	N-channel enhancement mode field-effect transistor Rev. 01-23 June 2003
Unisonic Technologies	2N7002	148Kb / 6P	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Chino-Excel Technology	CEP13N10	98Kb / 4P	N-Channel Enhancement Mode Field Effect Transistor
	CEP50N06	391Kb / 4P	N-Channel Enhancement Mode Field Effect Transistor
	CEP65A3	101Kb / 4P	N-Channel Enhancement Mode Field Effect Transistor
	CEP80N75	400Kb / 4P	N-Channel Enhancement Mode Field Effect Transistor
	CEP658N	491Kb / 4P	N-Channel Enhancement Mode Field Effect Transistor

More results

DMN2230U Datasheet(PDF) 2 Page - Diodes Incorporated

DMN2230U Datasheet(HTML) 2 Page - Diodes Incorporated

Similar Part No. - DMN2230U

Similar Description - DMN2230U

Html Pages

1 2 3 4

Datasheet Download

Link URL