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DMP2004K-7 Datasheet(PDF) 1 Page - Diodes Incorporated |
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DMP2004K-7 Datasheet(HTML) 1 Page - Diodes Incorporated |
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1 / 5 page  DMP2004K Document number: DS30933 Rev. 4 - 2 1 of 5 www.diodes.com June 2010 © Diodes Incorporated DMP2004K P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Low On-Resistance • Very Low Gate Threshold Voltage VGS(TH) <1V • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead Free By Design/RoHS Compliant (Note 2) • ESD Protected Gate • "Green" Device (Note 3) • Qualified to AEC-Q101 standards for High Reliability Mechanical Data • Case: SOT-23 • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 • Terminal Connections: See Diagram • Marking Information: See Page 3 • Ordering Information: See Page 3 • Weight: 0.008 grams (approximate) Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Units Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS ±8 V Drain Current (Note 1) VGS = -4.5V ID -600 mA Pulsed Drain Current IDM -1.9 A Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Value Units Total Power Dissipation (Note 1) PD 550 mW Thermal Resistance, Junction to Ambient RθJA 227 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage BVDSS -20 ⎯ ⎯ V VGS = 0V, ID = -250mA Zero Gate Voltage Drain Current IDSS ⎯ ⎯ -1.0 μA VDS = -20V, VGS = 0V Gate-Source Leakage IGSS ⎯ ⎯ ±1.0 μA VGS = ±4.5V, VDS = 0V ON CHARACTERISTICS (Note 4) Gate Threshold Voltage VGS(th) -0.5 ⎯ -1.0 V VDS = VGS, ID = -250μA Static Drain-Source On-Resistance RDS (ON) ⎯ 0.7 1.1 1.7 0.9 1.4 2.0 Ω VGS = -4.5V, ID = -430mA VGS = -2.5V, ID = -300mA VGS = -1.8V, ID = -150mA Forward Transfer Admittance |Yfs| 200 ⎯ ⎯ mS VDS = -10V, ID = -0.2A Diode Forward Voltage (Note 4) VSD -0.5 ⎯ -1.2 V VGS = 0V, IS = -115mA DYNAMIC CHARACTERISTICS Input Capacitance Ciss ⎯ ⎯ 175 pF VDS = -16V, VGS = 0V f = 1.0MHz Output Capacitance Coss ⎯ ⎯ 30 pF Reverse Transfer Capacitance Crss ⎯ ⎯ 20 pF Notes: 1. Device mounted on FR-4 PCB. 2. No purposefully added lead. 3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 4. Short duration pulse test used to minimize self-heating effect. SOT-23 TOP VIEW Equivalent Circuit TOP VIEW ESD protected Source Gate Protection Diode Gate Drain D G S |
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